SUP75P05-08-E3
For Reference Only
| Part Number | SUP75P05-08-E3 |
| PNEDA Part # | SUP75P05-08-E3 |
| Description | MOSFET P-CH 55V 75A TO220-3 |
| Manufacturer | Vishay Siliconix |
| Unit Price | Request a Quote |
| In Stock | 2,934 |
| Warehouses | Shipped from Hong Kong SAR |
| Estimated Delivery | Mar 17 - Mar 22 (Choose Expedited Shipping) |
| Guarantee | Up to 1 year [PNEDA-Warranty]* |
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Free shipping on orders over $100. PNEDA is willing to provide you with better services.
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SUP75P05-08-E3 Resources
| Brand | Vishay Siliconix |
| ECAD Module |
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| Mfr. Part Number | SUP75P05-08-E3 |
| Category | Semiconductors › Transistors › Transistors - FETs, MOSFETs - Single |
| Datasheet |
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SUP75P05-08-E3 Specifications
| Manufacturer | Vishay Siliconix |
| Series | TrenchFET® |
| FET Type | P-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 55V |
| Current - Continuous Drain (Id) @ 25°C | 75A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Rds On (Max) @ Id, Vgs | 8mOhm @ 30A, 10V |
| Vgs(th) (Max) @ Id | 3V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 225nC @ 10V |
| Vgs (Max) | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 8500pF @ 25V |
| FET Feature | - |
| Power Dissipation (Max) | 3.7W (Ta), 250W (Tc) |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Mounting Type | Through Hole |
| Supplier Device Package | TO-220AB |
| Package / Case | TO-220-3 |
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Manufacturer Infineon Technologies Series CoolMOS™ CE FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 600V Current - Continuous Drain (Id) @ 25°C 2.3A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 2.1Ohm @ 760mA, 10V Vgs(th) (Max) @ Id 3.5V @ 60µA Gate Charge (Qg) (Max) @ Vgs 6.7nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 140pF @ 100V FET Feature - Power Dissipation (Max) 22W (Tc) Operating Temperature -40°C ~ 150°C (TJ) Mounting Type Through Hole Supplier Device Package PG-TO251-3 Package / Case TO-251-3 Short Leads, IPak, TO-251AA |
