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SUP50N10-21P-GE3

SUP50N10-21P-GE3

For Reference Only

Part Number SUP50N10-21P-GE3
PNEDA Part # SUP50N10-21P-GE3
Description MOSFET N-CH 100V 50A TO220AB
Manufacturer Vishay Siliconix
Unit Price Request a Quote
In Stock 7,308
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Mar 18 - Mar 23 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

SUP50N10-21P-GE3 Resources

Brand Vishay Siliconix
ECAD Module ECAD
Mfr. Part NumberSUP50N10-21P-GE3
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
SUP50N10-21P-GE3, SUP50N10-21P-GE3 Datasheet (Total Pages: 7, Size: 122.75 KB)
PDFSUP50N10-21P-GE3 Datasheet Cover
SUP50N10-21P-GE3 Datasheet Page 2 SUP50N10-21P-GE3 Datasheet Page 3 SUP50N10-21P-GE3 Datasheet Page 4 SUP50N10-21P-GE3 Datasheet Page 5 SUP50N10-21P-GE3 Datasheet Page 6 SUP50N10-21P-GE3 Datasheet Page 7

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SUP50N10-21P-GE3 Specifications

ManufacturerVishay Siliconix
SeriesTrenchFET®
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)100V
Current - Continuous Drain (Id) @ 25°C50A (Tc)
Drive Voltage (Max Rds On, Min Rds On)6V, 10V
Rds On (Max) @ Id, Vgs21mOhm @ 10A, 10V
Vgs(th) (Max) @ Id4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs68nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds2055pF @ 50V
FET Feature-
Power Dissipation (Max)3.1W (Ta), 125W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-220AB
Package / CaseTO-220-3

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