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SUP50N03-5M1P-GE3

SUP50N03-5M1P-GE3

For Reference Only

Part Number SUP50N03-5M1P-GE3
PNEDA Part # SUP50N03-5M1P-GE3
Description MOSFET N-CH 30V 50A TO-220AB
Manufacturer Vishay Siliconix
Unit Price Request a Quote
In Stock 4,050
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Mar 20 - Mar 25 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

SUP50N03-5M1P-GE3 Resources

Brand Vishay Siliconix
ECAD Module ECAD
Mfr. Part NumberSUP50N03-5M1P-GE3
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
SUP50N03-5M1P-GE3, SUP50N03-5M1P-GE3 Datasheet (Total Pages: 7, Size: 127.13 KB)
PDFSUP50N03-5M1P-GE3 Datasheet Cover
SUP50N03-5M1P-GE3 Datasheet Page 2 SUP50N03-5M1P-GE3 Datasheet Page 3 SUP50N03-5M1P-GE3 Datasheet Page 4 SUP50N03-5M1P-GE3 Datasheet Page 5 SUP50N03-5M1P-GE3 Datasheet Page 6 SUP50N03-5M1P-GE3 Datasheet Page 7

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SUP50N03-5M1P-GE3 Specifications

ManufacturerVishay Siliconix
SeriesTrenchFET®
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)30V
Current - Continuous Drain (Id) @ 25°C50A (Tc)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Rds On (Max) @ Id, Vgs5.1mOhm @ 22A, 10V
Vgs(th) (Max) @ Id2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs66nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds2780pF @ 15V
FET Feature-
Power Dissipation (Max)2.7W (Ta), 59.5W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-220AB
Package / CaseTO-220-3

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