Certifications

iso9001
iso14001
icas
Delivery
security
warranty
roiginal
RoHS
UL
Millions of Electronic Parts In Stock. Price & Lead Time Quotes within 24 Hours.

SUP50N03-5M1P-GE3

SUP50N03-5M1P-GE3

For Reference Only

Part Number SUP50N03-5M1P-GE3
PNEDA Part # SUP50N03-5M1P-GE3
Description MOSFET N-CH 30V 50A TO-220AB
Manufacturer Vishay Siliconix
Unit Price Request a Quote
In Stock 4,050
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Mar 21 - Mar 26 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

SUP50N03-5M1P-GE3 Resources

Brand Vishay Siliconix
ECAD Module ECAD
Mfr. Part NumberSUP50N03-5M1P-GE3
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
SUP50N03-5M1P-GE3, SUP50N03-5M1P-GE3 Datasheet (Total Pages: 7, Size: 127.13 KB)
PDFSUP50N03-5M1P-GE3 Datasheet Cover
SUP50N03-5M1P-GE3 Datasheet Page 2 SUP50N03-5M1P-GE3 Datasheet Page 3 SUP50N03-5M1P-GE3 Datasheet Page 4 SUP50N03-5M1P-GE3 Datasheet Page 5 SUP50N03-5M1P-GE3 Datasheet Page 6 SUP50N03-5M1P-GE3 Datasheet Page 7

Payment Method

TT Unionpay paypal paypalwtcreditcard alipay wu
  • Penda is not limited to cash transfers. Checks and bill transfers are also accepted.
  • If you need the detailed invoice or tax ID,please email us.
  • Some orders may require a minimum amount of $100.00.
  • Cheque or cash on delivery, processing may take an additional 3-5 days.

Logistics Mode

TNT UPS Fedex EMS DHL
  • Delivery time: At the same day (Order deadline is 2pm, HK Time).
  • Delivery date: usually 2 to 7 working days.
  • It is unable to appoint a date of delivery.
  • Tracking number will be sent once your order has been shipped.
  • It may take up to 24 hours before carriers display the info.

Notes

  • Please confirm the specifications of the products when ordering.
  • If you have special order instructions,please note it on the ordering pages.
  • Registered users can log in to the account to view the order status.
  • You can email us to change the order details before shipment.
  • Orders cannot be canceled after shipping the packages.

At PNEDA, we strive to be the industry leader by quickly and reliably supplying high-quality electronic components to our clients.

Our approach is built around proving our clients with three key advantages:

  • Prompt Responsiveness

    Our team responds quickly to your requests, and gets to work immediately to find your parts.

  • Guaranteed Quality

    Our quality-control processes guard against counterfeits while ensuring reliability and performance.

  • Global Access

    Our worldwide network of trusted resources allows us to find and deliver the specific parts you need.

Hot search vocabulary

  • SUP50N03-5M1P-GE3 Datasheet
  • where to find SUP50N03-5M1P-GE3
  • Vishay Siliconix

  • Vishay Siliconix SUP50N03-5M1P-GE3
  • SUP50N03-5M1P-GE3 PDF Datasheet
  • SUP50N03-5M1P-GE3 Stock

  • SUP50N03-5M1P-GE3 Pinout
  • Datasheet SUP50N03-5M1P-GE3
  • SUP50N03-5M1P-GE3 Supplier

  • Vishay Siliconix Distributor
  • SUP50N03-5M1P-GE3 Price
  • SUP50N03-5M1P-GE3 Distributor

SUP50N03-5M1P-GE3 Specifications

ManufacturerVishay Siliconix
SeriesTrenchFET®
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)30V
Current - Continuous Drain (Id) @ 25°C50A (Tc)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Rds On (Max) @ Id, Vgs5.1mOhm @ 22A, 10V
Vgs(th) (Max) @ Id2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs66nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds2780pF @ 15V
FET Feature-
Power Dissipation (Max)2.7W (Ta), 59.5W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-220AB
Package / CaseTO-220-3

The Products You May Be Interested In

HUF75333P3

ON Semiconductor

Manufacturer

ON Semiconductor

Series

UltraFET™

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

55V

Current - Continuous Drain (Id) @ 25°C

66A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

16mOhm @ 66A, 10V

Vgs(th) (Max) @ Id

4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

85nC @ 20V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

1300pF @ 25V

FET Feature

-

Power Dissipation (Max)

150W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-220-3

Package / Case

TO-220-3

TSM230N06CI C0G

Taiwan Semiconductor Corporation

Manufacturer

Taiwan Semiconductor Corporation

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

60V

Current - Continuous Drain (Id) @ 25°C

50A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

23mOhm @ 20A, 10V

Vgs(th) (Max) @ Id

2.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

28nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

1680pF @ 25V

FET Feature

-

Power Dissipation (Max)

42W (Tc)

Operating Temperature

150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

ITO-220

Package / Case

TO-220-3 Full Pack, Isolated Tab

TSM5NC50CP ROG

Taiwan Semiconductor Corporation

Manufacturer

Taiwan Semiconductor Corporation

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

500V

Current - Continuous Drain (Id) @ 25°C

5A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

1.38Ohm @ 2.4A, 10V

Vgs(th) (Max) @ Id

4.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

15nC @ 10V

Vgs (Max)

±30V

Input Capacitance (Ciss) (Max) @ Vds

586pF @ 50V

FET Feature

-

Power Dissipation (Max)

83W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

TO-252, (D-Pak)

Package / Case

TO-252-3, DPak (2 Leads + Tab), SC-63

NVD4809NHT4G

ON Semiconductor

Manufacturer

ON Semiconductor

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

30V

Current - Continuous Drain (Id) @ 25°C

9A (Ta), 58A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 11.5V

Rds On (Max) @ Id, Vgs

9mOhm @ 30A, 10V

Vgs(th) (Max) @ Id

2.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

44nC @ 11.5V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

2155pF @ 12V

FET Feature

-

Power Dissipation (Max)

1.3W (Ta), 52W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

DPAK-3

Package / Case

TO-252-3, DPak (2 Leads + Tab), SC-63

NVMFS6B03NT1G

ON Semiconductor

Manufacturer

ON Semiconductor

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

100V

Current - Continuous Drain (Id) @ 25°C

-

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

4.8mOhm @ 20A, 10V

Vgs(th) (Max) @ Id

4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

58nC @ 10V

Vgs (Max)

±16V

Input Capacitance (Ciss) (Max) @ Vds

4200pF @ 50V

FET Feature

-

Power Dissipation (Max)

3.9W (Ta), 198W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

5-DFN (5x6) (8-SOFL)

Package / Case

8-PowerTDFN

Recently Sold

FMG2G400US60

FMG2G400US60

ON Semiconductor

IGBT MOLDING 600V 400A 7PM-IA

M29W800DT70N6E

M29W800DT70N6E

Micron Technology Inc.

IC FLASH 8M PARALLEL 48TSOP

PIC18F6410-I/PT

PIC18F6410-I/PT

Microchip Technology

IC MCU 8BIT 16KB FLASH 64TQFP

ADXRS450BEYZ

ADXRS450BEYZ

Analog Devices

SENS GYRO 300DEG/S DGTL 14CLCC

0452007.MRL

0452007.MRL

Littelfuse

FUSE BRD MNT 7A 72VAC 60VDC 2SMD

NUC2401MNTAG

NUC2401MNTAG

ON Semiconductor

CMC 100MA 2LN 90 OHM SMD

PT61020EL

PT61020EL

Bourns

PULSE XFMR 1CT:1 350UH

ATF-54143-TR1G

ATF-54143-TR1G

Broadcom

FET RF 5V 2GHZ SOT-343

MC9S08LG16CLF

MC9S08LG16CLF

NXP

IC MCU 8BIT 18KB FLASH 48LQFP

ALS70A243DF063

ALS70A243DF063

KEMET

CAP ALUM 24000UF 20% 63V SCREW

MT40A256M16GE-083E IT:B

MT40A256M16GE-083E IT:B

Micron Technology Inc.

IC DRAM 4G PARALLEL 96FBGA

843002AKI-40LFT

843002AKI-40LFT

IDT, Integrated Device Technology

IC SYNTHESIZER LVPECL 32-VFQFPN