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SUM90N10-8M2P-E3

SUM90N10-8M2P-E3

For Reference Only

Part Number SUM90N10-8M2P-E3
PNEDA Part # SUM90N10-8M2P-E3
Description MOSFET N-CH 100V 90A D2PAK
Manufacturer Vishay Siliconix
Unit Price Request a Quote
In Stock 63,492
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Nov 27 - Dec 2 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

SUM90N10-8M2P-E3 Resources

Brand Vishay Siliconix
ECAD Module ECAD
Mfr. Part NumberSUM90N10-8M2P-E3
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
SUM90N10-8M2P-E3, SUM90N10-8M2P-E3 Datasheet (Total Pages: 8, Size: 153.4 KB)
PDFSUM90N10-8M2P-E3 Datasheet Cover
SUM90N10-8M2P-E3 Datasheet Page 2 SUM90N10-8M2P-E3 Datasheet Page 3 SUM90N10-8M2P-E3 Datasheet Page 4 SUM90N10-8M2P-E3 Datasheet Page 5 SUM90N10-8M2P-E3 Datasheet Page 6 SUM90N10-8M2P-E3 Datasheet Page 7 SUM90N10-8M2P-E3 Datasheet Page 8

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SUM90N10-8M2P-E3 Specifications

ManufacturerVishay Siliconix
SeriesTrenchFET®
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)100V
Current - Continuous Drain (Id) @ 25°C90A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs8.2mOhm @ 20A, 10V
Vgs(th) (Max) @ Id4.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs150nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds6290pF @ 50V
FET Feature-
Power Dissipation (Max)3.75W (Ta), 300W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageTO-263 (D2Pak)
Package / CaseTO-263-3, D²Pak (2 Leads + Tab), TO-263AB

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