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SUM50010E-GE3

SUM50010E-GE3

For Reference Only

Part Number SUM50010E-GE3
PNEDA Part # SUM50010E-GE3
Description MOSFET N-CHAN 60-V D2PAK (TO-263
Manufacturer Vishay Siliconix
Unit Price Request a Quote
In Stock 7,236
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Nov 27 - Dec 2 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

SUM50010E-GE3 Resources

Brand Vishay Siliconix
ECAD Module ECAD
Mfr. Part NumberSUM50010E-GE3
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
SUM50010E-GE3, SUM50010E-GE3 Datasheet (Total Pages: 8, Size: 196.19 KB)
PDFSUM50010E-GE3 Datasheet Cover
SUM50010E-GE3 Datasheet Page 2 SUM50010E-GE3 Datasheet Page 3 SUM50010E-GE3 Datasheet Page 4 SUM50010E-GE3 Datasheet Page 5 SUM50010E-GE3 Datasheet Page 6 SUM50010E-GE3 Datasheet Page 7 SUM50010E-GE3 Datasheet Page 8

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SUM50010E-GE3 Specifications

ManufacturerVishay Siliconix
SeriesTrenchFET®
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)60V
Current - Continuous Drain (Id) @ 25°C150A (Tc)
Drive Voltage (Max Rds On, Min Rds On)7.5V, 10V
Rds On (Max) @ Id, Vgs1.75mOhm @ 30A, 10V
Vgs(th) (Max) @ Id4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs212nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds10895pF @ 30V
FET Feature-
Power Dissipation (Max)375W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageTO-263 (D²Pak)
Package / CaseTO-263-3, D²Pak (2 Leads + Tab), TO-263AB

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