Certifications

iso9001
iso14001
icas
Delivery
security
warranty
roiginal
RoHS
UL
Millions of Electronic Parts In Stock. Price & Lead Time Quotes within 24 Hours.

SUD50P10-43L-GE3

SUD50P10-43L-GE3

For Reference Only

Part Number SUD50P10-43L-GE3
PNEDA Part # SUD50P10-43L-GE3
Description MOSFET P-CH 100V 37.1A TO252
Manufacturer Vishay Siliconix
Unit Price Request a Quote
In Stock 7,308
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Apr 19 - Apr 24 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

SUD50P10-43L-GE3 Resources

Brand Vishay Siliconix
ECAD Module ECAD
Mfr. Part NumberSUD50P10-43L-GE3
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
SUD50P10-43L-GE3, SUD50P10-43L-GE3 Datasheet (Total Pages: 9, Size: 147.51 KB)
PDFSUD50P10-43L-GE3 Datasheet Cover
SUD50P10-43L-GE3 Datasheet Page 2 SUD50P10-43L-GE3 Datasheet Page 3 SUD50P10-43L-GE3 Datasheet Page 4 SUD50P10-43L-GE3 Datasheet Page 5 SUD50P10-43L-GE3 Datasheet Page 6 SUD50P10-43L-GE3 Datasheet Page 7 SUD50P10-43L-GE3 Datasheet Page 8 SUD50P10-43L-GE3 Datasheet Page 9

Payment Method

TT Unionpay paypal paypalwtcreditcard alipay wu
  • Penda is not limited to cash transfers. Checks and bill transfers are also accepted.
  • If you need the detailed invoice or tax ID,please email us.
  • Some orders may require a minimum amount of $100.00.
  • Cheque or cash on delivery, processing may take an additional 3-5 days.

Logistics Mode

TNT UPS Fedex EMS DHL
  • Delivery time: At the same day (Order deadline is 2pm, HK Time).
  • Delivery date: usually 2 to 7 working days.
  • It is unable to appoint a date of delivery.
  • Tracking number will be sent once your order has been shipped.
  • It may take up to 24 hours before carriers display the info.

Notes

  • Please confirm the specifications of the products when ordering.
  • If you have special order instructions,please note it on the ordering pages.
  • Registered users can log in to the account to view the order status.
  • You can email us to change the order details before shipment.
  • Orders cannot be canceled after shipping the packages.

At PNEDA, we strive to be the industry leader by quickly and reliably supplying high-quality electronic components to our clients.

Our approach is built around proving our clients with three key advantages:

  • Prompt Responsiveness

    Our team responds quickly to your requests, and gets to work immediately to find your parts.

  • Guaranteed Quality

    Our quality-control processes guard against counterfeits while ensuring reliability and performance.

  • Global Access

    Our worldwide network of trusted resources allows us to find and deliver the specific parts you need.

Hot search vocabulary

  • SUD50P10-43L-GE3 Datasheet
  • where to find SUD50P10-43L-GE3
  • Vishay Siliconix

  • Vishay Siliconix SUD50P10-43L-GE3
  • SUD50P10-43L-GE3 PDF Datasheet
  • SUD50P10-43L-GE3 Stock

  • SUD50P10-43L-GE3 Pinout
  • Datasheet SUD50P10-43L-GE3
  • SUD50P10-43L-GE3 Supplier

  • Vishay Siliconix Distributor
  • SUD50P10-43L-GE3 Price
  • SUD50P10-43L-GE3 Distributor

SUD50P10-43L-GE3 Specifications

ManufacturerVishay Siliconix
SeriesTrenchFET®
FET TypeP-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)100V
Current - Continuous Drain (Id) @ 25°C37.1A (Tc)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Rds On (Max) @ Id, Vgs43mOhm @ 9.2A, 10V
Vgs(th) (Max) @ Id3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs160nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds4600pF @ 50V
FET Feature-
Power Dissipation (Max)8.3W (Ta), 136W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageTO-252
Package / CaseTO-252-3, DPak (2 Leads + Tab), SC-63

The Products You May Be Interested In

IPA60R299CPXKSA1

Infineon Technologies

Manufacturer

Infineon Technologies

Series

CoolMOS™

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

600V

Current - Continuous Drain (Id) @ 25°C

11A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

299mOhm @ 6.6A, 10V

Vgs(th) (Max) @ Id

3.5V @ 440µA

Gate Charge (Qg) (Max) @ Vgs

29nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

1100pF @ 100V

FET Feature

-

Power Dissipation (Max)

33W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

PG-TO220-FP

Package / Case

TO-220-3 Full Pack

NTD5865NLT4G

ON Semiconductor

Manufacturer

ON Semiconductor

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

60V

Current - Continuous Drain (Id) @ 25°C

46A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

16mOhm @ 20A, 10V

Vgs(th) (Max) @ Id

2V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

29nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

1400pF @ 25V

FET Feature

-

Power Dissipation (Max)

71W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

DPAK

Package / Case

TO-252-3, DPak (2 Leads + Tab), SC-63

IRFR014TRL

Vishay Siliconix

Manufacturer

Vishay Siliconix

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

60V

Current - Continuous Drain (Id) @ 25°C

7.7A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

200mOhm @ 4.6A, 10V

Vgs(th) (Max) @ Id

4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

11nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

300pF @ 25V

FET Feature

-

Power Dissipation (Max)

2.5W (Ta), 25W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

D-Pak

Package / Case

TO-252-3, DPak (2 Leads + Tab), SC-63

HUFA75333P3

ON Semiconductor

Manufacturer

ON Semiconductor

Series

UltraFET™

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

55V

Current - Continuous Drain (Id) @ 25°C

66A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

16mOhm @ 66A, 10V

Vgs(th) (Max) @ Id

4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

85nC @ 20V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

1300pF @ 25V

FET Feature

-

Power Dissipation (Max)

150W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-220-3

Package / Case

TO-220-3

BUK9Y7R6-40E,115

Nexperia

Manufacturer

Nexperia USA Inc.

Series

Automotive, AEC-Q101

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

40V

Current - Continuous Drain (Id) @ 25°C

79A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

5V, 10V

Rds On (Max) @ Id, Vgs

6mOhm @ 20A, 10V

Vgs(th) (Max) @ Id

2.1V @ 1mA

Gate Charge (Qg) (Max) @ Vgs

16.4nC @ 5V

Vgs (Max)

±10V

Input Capacitance (Ciss) (Max) @ Vds

2403pF @ 25V

FET Feature

-

Power Dissipation (Max)

95W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

LFPAK56, Power-SO8

Package / Case

SC-100, SOT-669

Recently Sold

SMCJ5.0CA

SMCJ5.0CA

TVS DIODE 5V 9.2V DO214AB

ADA4096-2ARMZ

ADA4096-2ARMZ

Analog Devices

IC OPAMP GP 2 CIRCUIT 8MSOP

FMMT718TA

FMMT718TA

Diodes Incorporated

TRANS PNP 20V 1.5A SOT23-3

ATTINY841-SSU

ATTINY841-SSU

Microchip Technology

IC MCU 8BIT 8KB FLASH 14SOIC

HSMS-2820-TR1G

HSMS-2820-TR1G

Broadcom

RF DIODE SCHOTTKY 15V SOT23-3

P6KE150A

P6KE150A

Taiwan Semiconductor Corporation

TVS DIODE 128V 207V DO15

MIC4420YN

MIC4420YN

Microchip Technology

IC DRIVER MOSFET 6A LO SIDE 8DIP

LPC1788FBD208,551

LPC1788FBD208,551

NXP

IC MCU 32BIT 512KB FLASH 208LQFP

MAX9910EXK+T

MAX9910EXK+T

Maxim Integrated

IC OPAMP GP 1 CIRCUIT SC70-5

9ZXL0831EKILF

9ZXL0831EKILF

IDT, Integrated Device Technology

DB800ZL

AN7706SP-E1

AN7706SP-E1

Panasonic Electronic Components

IC REG LINEAR 6V 1.2A SP3SUA

M29W320EB70ZE6E

M29W320EB70ZE6E

Micron Technology Inc.

IC FLASH 32M PARALLEL 48TFBGA