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SUD50P10-43L-GE3

SUD50P10-43L-GE3

For Reference Only

Part Number SUD50P10-43L-GE3
PNEDA Part # SUD50P10-43L-GE3
Description MOSFET P-CH 100V 37.1A TO252
Manufacturer Vishay Siliconix
Unit Price Request a Quote
In Stock 7,308
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Mar 20 - Mar 25 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

SUD50P10-43L-GE3 Resources

Brand Vishay Siliconix
ECAD Module ECAD
Mfr. Part NumberSUD50P10-43L-GE3
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
SUD50P10-43L-GE3, SUD50P10-43L-GE3 Datasheet (Total Pages: 9, Size: 147.51 KB)
PDFSUD50P10-43L-GE3 Datasheet Cover
SUD50P10-43L-GE3 Datasheet Page 2 SUD50P10-43L-GE3 Datasheet Page 3 SUD50P10-43L-GE3 Datasheet Page 4 SUD50P10-43L-GE3 Datasheet Page 5 SUD50P10-43L-GE3 Datasheet Page 6 SUD50P10-43L-GE3 Datasheet Page 7 SUD50P10-43L-GE3 Datasheet Page 8 SUD50P10-43L-GE3 Datasheet Page 9

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SUD50P10-43L-GE3 Specifications

ManufacturerVishay Siliconix
SeriesTrenchFET®
FET TypeP-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)100V
Current - Continuous Drain (Id) @ 25°C37.1A (Tc)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Rds On (Max) @ Id, Vgs43mOhm @ 9.2A, 10V
Vgs(th) (Max) @ Id3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs160nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds4600pF @ 50V
FET Feature-
Power Dissipation (Max)8.3W (Ta), 136W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageTO-252
Package / CaseTO-252-3, DPak (2 Leads + Tab), SC-63

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