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SUD50N10-34P-T4-E3

SUD50N10-34P-T4-E3

For Reference Only

Part Number SUD50N10-34P-T4-E3
PNEDA Part # SUD50N10-34P-T4-E3
Description MOSFET N-CH 100V 5.9A TO252
Manufacturer Vishay Siliconix
Unit Price Request a Quote
In Stock 4,914
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Apr 5 - Apr 10 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

SUD50N10-34P-T4-E3 Resources

Brand Vishay Siliconix
ECAD Module ECAD
Mfr. Part NumberSUD50N10-34P-T4-E3
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
SUD50N10-34P-T4-E3, SUD50N10-34P-T4-E3 Datasheet (Total Pages: 7, Size: 127.31 KB)
PDFSUD50N10-34P-T4-E3 Datasheet Cover
SUD50N10-34P-T4-E3 Datasheet Page 2 SUD50N10-34P-T4-E3 Datasheet Page 3 SUD50N10-34P-T4-E3 Datasheet Page 4 SUD50N10-34P-T4-E3 Datasheet Page 5 SUD50N10-34P-T4-E3 Datasheet Page 6 SUD50N10-34P-T4-E3 Datasheet Page 7

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SUD50N10-34P-T4-E3 Specifications

ManufacturerVishay Siliconix
SeriesTrenchFET®
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)100V
Current - Continuous Drain (Id) @ 25°C5.9A (Ta), 20A (Tc)
Drive Voltage (Max Rds On, Min Rds On)6V, 10V
Rds On (Max) @ Id, Vgs34mOhm @ 7A, 10V
Vgs(th) (Max) @ Id4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs30nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds1800pF @ 25V
FET Feature-
Power Dissipation (Max)2.5W (Ta), 56W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageTO-252, (D-Pak)
Package / CaseTO-252-3, DPak (2 Leads + Tab), SC-63

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