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SUD50N10-18P-E3

SUD50N10-18P-E3

For Reference Only

Part Number SUD50N10-18P-E3
PNEDA Part # SUD50N10-18P-E3
Description MOSFET N-CH 100V 8.2A TO252
Manufacturer Vishay Siliconix
Unit Price Request a Quote
In Stock 6,030
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Nov 26 - Dec 1 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

SUD50N10-18P-E3 Resources

Brand Vishay Siliconix
ECAD Module ECAD
Mfr. Part NumberSUD50N10-18P-E3
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
SUD50N10-18P-E3, SUD50N10-18P-E3 Datasheet (Total Pages: 8, Size: 117.93 KB)
PDFSUD50N10-18P-E3 Datasheet Cover
SUD50N10-18P-E3 Datasheet Page 2 SUD50N10-18P-E3 Datasheet Page 3 SUD50N10-18P-E3 Datasheet Page 4 SUD50N10-18P-E3 Datasheet Page 5 SUD50N10-18P-E3 Datasheet Page 6 SUD50N10-18P-E3 Datasheet Page 7 SUD50N10-18P-E3 Datasheet Page 8

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SUD50N10-18P-E3 Specifications

ManufacturerVishay Siliconix
SeriesTrenchFET®
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)100V
Current - Continuous Drain (Id) @ 25°C8.2A (Ta), 50A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs18.5mOhm @ 15A, 10V
Vgs(th) (Max) @ Id5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs75nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds2600pF @ 50V
FET Feature-
Power Dissipation (Max)3W (Ta), 136.4W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageTO-252, (D-Pak)
Package / CaseTO-252-3, DPak (2 Leads + Tab), SC-63

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