SUD50N03-11-E3
For Reference Only
| Part Number | SUD50N03-11-E3 |
| PNEDA Part # | SUD50N03-11-E3 |
| Description | MOSFET N-CH 30V 50A TO252 |
| Manufacturer | Vishay Siliconix |
| Unit Price | Request a Quote |
| In Stock | 4,698 |
| Warehouses | Shipped from Hong Kong SAR |
| Estimated Delivery | Mar 17 - Mar 22 (Choose Expedited Shipping) |
| Guarantee | Up to 1 year [PNEDA-Warranty]* |
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Free shipping on orders over $100. PNEDA is willing to provide you with better services.
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SUD50N03-11-E3 Resources
| Brand | Vishay Siliconix |
| ECAD Module |
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| Mfr. Part Number | SUD50N03-11-E3 |
| Category | Semiconductors › Transistors › Transistors - FETs, MOSFETs - Single |
| Datasheet |
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SUD50N03-11-E3 Specifications
| Manufacturer | Vishay Siliconix |
| Series | TrenchFET® |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 30V |
| Current - Continuous Drain (Id) @ 25°C | 50A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Rds On (Max) @ Id, Vgs | 11mOhm @ 25A, 10V |
| Vgs(th) (Max) @ Id | 800mV @ 250µA (Min) |
| Gate Charge (Qg) (Max) @ Vgs | 20nC @ 5V |
| Vgs (Max) | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 1130pF @ 25V |
| FET Feature | - |
| Power Dissipation (Max) | 7.5W (Ta), 62.5W (Tc) |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | TO-252, (D-Pak) |
| Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Manufacturer ON Semiconductor Series - FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 25V Current - Continuous Drain (Id) @ 25°C 7.6A (Ta), 58A (Tc) Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V Rds On (Max) @ Id, Vgs 10.5mOhm @ 20A, 10V Vgs(th) (Max) @ Id 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs 9.5nC @ 4.5V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 1330pF @ 20V FET Feature - Power Dissipation (Max) 1.04W (Ta), 62.5W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Through Hole Supplier Device Package TO-220AB Package / Case TO-220-3 |
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Manufacturer Alpha & Omega Semiconductor Inc. Series - FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 30V Current - Continuous Drain (Id) @ 25°C 23A (Ta), 47A (Tc) Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V Rds On (Max) @ Id, Vgs 7.2mOhm @ 20A, 10V Vgs(th) (Max) @ Id 2.2V @ 250µA Gate Charge (Qg) (Max) @ Vgs 13nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 840pF @ 15V FET Feature - Power Dissipation (Max) 6.2W (Ta), 26W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package 8-DFN (5x6) Package / Case 8-PowerSMD, Flat Leads |
