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SUD50N03-09P-GE3

SUD50N03-09P-GE3

For Reference Only

Part Number SUD50N03-09P-GE3
PNEDA Part # SUD50N03-09P-GE3
Description MOSFET N-CH 30V 63A TO252
Manufacturer Vishay Siliconix
Unit Price Request a Quote
In Stock 5,256
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Mar 18 - Mar 23 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

SUD50N03-09P-GE3 Resources

Brand Vishay Siliconix
ECAD Module ECAD
Mfr. Part NumberSUD50N03-09P-GE3
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
SUD50N03-09P-GE3, SUD50N03-09P-GE3 Datasheet (Total Pages: 7, Size: 154.76 KB)
PDFSUD50N03-09P-E3 Datasheet Cover
SUD50N03-09P-E3 Datasheet Page 2 SUD50N03-09P-E3 Datasheet Page 3 SUD50N03-09P-E3 Datasheet Page 4 SUD50N03-09P-E3 Datasheet Page 5 SUD50N03-09P-E3 Datasheet Page 6 SUD50N03-09P-E3 Datasheet Page 7

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SUD50N03-09P-GE3 Specifications

ManufacturerVishay Siliconix
SeriesTrenchFET®
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)30V
Current - Continuous Drain (Id) @ 25°C63A (Tc)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Rds On (Max) @ Id, Vgs9.5mOhm @ 20A, 10V
Vgs(th) (Max) @ Id3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs16nC @ 4.5V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds2200pF @ 25V
FET Feature-
Power Dissipation (Max)7.5W (Ta), 65.2W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageTO-252, (D-Pak)
Package / CaseTO-252-3, DPak (2 Leads + Tab), SC-63

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