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SUD42N03-3M9P-GE3

SUD42N03-3M9P-GE3

For Reference Only

Part Number SUD42N03-3M9P-GE3
PNEDA Part # SUD42N03-3M9P-GE3
Description MOSFET N-CH 30V 42A TO252
Manufacturer Vishay Siliconix
Unit Price Request a Quote
In Stock 7,560
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Nov 24 - Nov 29 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

SUD42N03-3M9P-GE3 Resources

Brand Vishay Siliconix
ECAD Module ECAD
Mfr. Part NumberSUD42N03-3M9P-GE3
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
SUD42N03-3M9P-GE3, SUD42N03-3M9P-GE3 Datasheet (Total Pages: 8, Size: 134.11 KB)
PDFSUD42N03-3M9P-GE3 Datasheet Cover
SUD42N03-3M9P-GE3 Datasheet Page 2 SUD42N03-3M9P-GE3 Datasheet Page 3 SUD42N03-3M9P-GE3 Datasheet Page 4 SUD42N03-3M9P-GE3 Datasheet Page 5 SUD42N03-3M9P-GE3 Datasheet Page 6 SUD42N03-3M9P-GE3 Datasheet Page 7 SUD42N03-3M9P-GE3 Datasheet Page 8

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SUD42N03-3M9P-GE3 Specifications

ManufacturerVishay Siliconix
SeriesTrenchFET®
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)30V
Current - Continuous Drain (Id) @ 25°C42A (Tc)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Rds On (Max) @ Id, Vgs3.9mOhm @ 22A, 10V
Vgs(th) (Max) @ Id2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs100nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds3535pF @ 15V
FET Feature-
Power Dissipation (Max)2.5W (Ta), 73.5W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageTO-252
Package / CaseTO-252-3, DPak (2 Leads + Tab), SC-63

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