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SUD23N06-31-GE3

SUD23N06-31-GE3

For Reference Only

Part Number SUD23N06-31-GE3
PNEDA Part # SUD23N06-31-GE3
Description MOSFET N-CH 60V 21.4A TO-252
Manufacturer Vishay Siliconix
Unit Price Request a Quote
In Stock 20,772
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Nov 24 - Nov 29 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

SUD23N06-31-GE3 Resources

Brand Vishay Siliconix
ECAD Module ECAD
Mfr. Part NumberSUD23N06-31-GE3
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
SUD23N06-31-GE3, SUD23N06-31-GE3 Datasheet (Total Pages: 9, Size: 140.77 KB)
PDFSUD23N06-31-T4-GE3 Datasheet Cover
SUD23N06-31-T4-GE3 Datasheet Page 2 SUD23N06-31-T4-GE3 Datasheet Page 3 SUD23N06-31-T4-GE3 Datasheet Page 4 SUD23N06-31-T4-GE3 Datasheet Page 5 SUD23N06-31-T4-GE3 Datasheet Page 6 SUD23N06-31-T4-GE3 Datasheet Page 7 SUD23N06-31-T4-GE3 Datasheet Page 8 SUD23N06-31-T4-GE3 Datasheet Page 9

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SUD23N06-31-GE3 Specifications

ManufacturerVishay Siliconix
SeriesTrenchFET®
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)60V
Current - Continuous Drain (Id) @ 25°C21.4A (Tc)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Rds On (Max) @ Id, Vgs31mOhm @ 15A, 10V
Vgs(th) (Max) @ Id3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs17nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds670pF @ 25V
FET Feature-
Power Dissipation (Max)5.7W (Ta), 31.25W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageTO-252, (D-Pak)
Package / CaseTO-252-3, DPak (2 Leads + Tab), SC-63

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