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SUD19P06-60-GE3

SUD19P06-60-GE3

For Reference Only

Part Number SUD19P06-60-GE3
PNEDA Part # SUD19P06-60-GE3
Description MOSFET P-CH 60V 18.3A TO-252
Manufacturer Vishay Siliconix
Unit Price Request a Quote
In Stock 259,560
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Mar 18 - Mar 23 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

SUD19P06-60-GE3 Resources

Brand Vishay Siliconix
ECAD Module ECAD
Mfr. Part NumberSUD19P06-60-GE3
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
SUD19P06-60-GE3, SUD19P06-60-GE3 Datasheet (Total Pages: 8, Size: 155.69 KB)
PDFSUD19P06-60-E3 Datasheet Cover
SUD19P06-60-E3 Datasheet Page 2 SUD19P06-60-E3 Datasheet Page 3 SUD19P06-60-E3 Datasheet Page 4 SUD19P06-60-E3 Datasheet Page 5 SUD19P06-60-E3 Datasheet Page 6 SUD19P06-60-E3 Datasheet Page 7 SUD19P06-60-E3 Datasheet Page 8

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SUD19P06-60-GE3 Specifications

ManufacturerVishay Siliconix
SeriesTrenchFET®
FET TypeP-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)60V
Current - Continuous Drain (Id) @ 25°C18.3A (Tc)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Rds On (Max) @ Id, Vgs60mOhm @ 10A, 10V
Vgs(th) (Max) @ Id3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs40nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds1710pF @ 25V
FET Feature-
Power Dissipation (Max)2.3W (Ta), 38.5W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageTO-252, (D-Pak)
Package / CaseTO-252-3, DPak (2 Leads + Tab), SC-63

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