STW8NB100
For Reference Only
| Part Number | STW8NB100 |
| PNEDA Part # | STW8NB100 |
| Description | MOSFET N-CH 1KV 7.3A TO-247 |
| Manufacturer | STMicroelectronics |
| Unit Price | Request a Quote |
| In Stock | 2,808 |
| Warehouses | Shipped from Hong Kong SAR |
| Estimated Delivery | Nov 30 - Dec 5 (Choose Expedited Shipping) |
| Guarantee | Up to 1 year [PNEDA-Warranty]* |
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Free shipping on orders over $100. PNEDA is willing to provide you with better services.
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STW8NB100 Resources
| Brand | STMicroelectronics |
| ECAD Module |
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| Mfr. Part Number | STW8NB100 |
| Category | Semiconductors › Transistors › Transistors - FETs, MOSFETs - Single |
| Datasheet |
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STW8NB100 Specifications
| Manufacturer | STMicroelectronics |
| Series | PowerMESH™ |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 1000V |
| Current - Continuous Drain (Id) @ 25°C | 7.3A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Rds On (Max) @ Id, Vgs | 1.45Ohm @ 3.6A, 10V |
| Vgs(th) (Max) @ Id | 5V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 95nC @ 10V |
| Vgs (Max) | ±30V |
| Input Capacitance (Ciss) (Max) @ Vds | 2900pF @ 25V |
| FET Feature | - |
| Power Dissipation (Max) | 190W (Tc) |
| Operating Temperature | 150°C (TJ) |
| Mounting Type | Through Hole |
| Supplier Device Package | TO-247-3 |
| Package / Case | TO-247-3 |
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Manufacturer Infineon Technologies Series HEXFET® FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 100V Current - Continuous Drain (Id) @ 25°C 33A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 52mOhm @ 16A, 10V Vgs(th) (Max) @ Id 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs 94nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 1400pF @ 25V FET Feature - Power Dissipation (Max) 140W (Tc) Operating Temperature -55°C ~ 175°C (TJ) Mounting Type Through Hole Supplier Device Package TO-247AC Package / Case TO-247-3 |
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