Certifications

iso9001
iso14001
icas
Delivery
security
warranty
roiginal
RoHS
UL
Millions of Electronic Parts In Stock. Price & Lead Time Quotes within 24 Hours.

STW26N60M2

STW26N60M2

For Reference Only

Part Number STW26N60M2
PNEDA Part # STW26N60M2
Description MOSFET N-CH 600V 20A TO247
Manufacturer STMicroelectronics
Unit Price Request a Quote
In Stock 3,510
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Nov 24 - Nov 29 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

STW26N60M2 Resources

Brand STMicroelectronics
ECAD Module ECAD
Mfr. Part NumberSTW26N60M2
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
STW26N60M2, STW26N60M2 Datasheet (Total Pages: 16, Size: 800.56 KB)
PDFSTW26N60M2 Datasheet Cover
STW26N60M2 Datasheet Page 2 STW26N60M2 Datasheet Page 3 STW26N60M2 Datasheet Page 4 STW26N60M2 Datasheet Page 5 STW26N60M2 Datasheet Page 6 STW26N60M2 Datasheet Page 7 STW26N60M2 Datasheet Page 8 STW26N60M2 Datasheet Page 9 STW26N60M2 Datasheet Page 10 STW26N60M2 Datasheet Page 11

Payment Method

TT Unionpay paypal paypalwtcreditcard alipay wu
  • Penda is not limited to cash transfers. Checks and bill transfers are also accepted.
  • If you need the detailed invoice or tax ID,please email us.
  • Some orders may require a minimum amount of $100.00.
  • Cheque or cash on delivery, processing may take an additional 3-5 days.

Logistics Mode

TNT UPS Fedex EMS DHL
  • Delivery time: At the same day (Order deadline is 2pm, HK Time).
  • Delivery date: usually 2 to 7 working days.
  • It is unable to appoint a date of delivery.
  • Tracking number will be sent once your order has been shipped.
  • It may take up to 24 hours before carriers display the info.

Notes

  • Please confirm the specifications of the products when ordering.
  • If you have special order instructions,please note it on the ordering pages.
  • Registered users can log in to the account to view the order status.
  • You can email us to change the order details before shipment.
  • Orders cannot be canceled after shipping the packages.

At PNEDA, we strive to be the industry leader by quickly and reliably supplying high-quality electronic components to our clients.

Our approach is built around proving our clients with three key advantages:

  • Prompt Responsiveness

    Our team responds quickly to your requests, and gets to work immediately to find your parts.

  • Guaranteed Quality

    Our quality-control processes guard against counterfeits while ensuring reliability and performance.

  • Global Access

    Our worldwide network of trusted resources allows us to find and deliver the specific parts you need.

Hot search vocabulary

  • STW26N60M2 Datasheet
  • where to find STW26N60M2
  • STMicroelectronics

  • STMicroelectronics STW26N60M2
  • STW26N60M2 PDF Datasheet
  • STW26N60M2 Stock

  • STW26N60M2 Pinout
  • Datasheet STW26N60M2
  • STW26N60M2 Supplier

  • STMicroelectronics Distributor
  • STW26N60M2 Price
  • STW26N60M2 Distributor

STW26N60M2 Specifications

ManufacturerSTMicroelectronics
SeriesMDmesh™ M2
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)600V
Current - Continuous Drain (Id) @ 25°C20A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs165mOhm @ 10A, 10V
Vgs(th) (Max) @ Id4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs34nC @ 10V
Vgs (Max)±25V
Input Capacitance (Ciss) (Max) @ Vds1360pF @ 100V
FET Feature-
Power Dissipation (Max)169W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-247 (IXFH)
Package / CaseTO-247-3

The Products You May Be Interested In

IPB083N15N5LFATMA1

Infineon Technologies

Manufacturer

Infineon Technologies

Series

OptiMOS™

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

150V

Current - Continuous Drain (Id) @ 25°C

105A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

8.3mOhm @ 100A, 10V

Vgs(th) (Max) @ Id

4.9V @ 134µA

Gate Charge (Qg) (Max) @ Vgs

45nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

210pF @ 75V

FET Feature

-

Power Dissipation (Max)

179W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

D²PAK (TO-263AB)

Package / Case

TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

DMN2005UFG-7

Diodes Incorporated

Manufacturer

Diodes Incorporated

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

20V

Current - Continuous Drain (Id) @ 25°C

18.1A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

2.5V, 4.5V

Rds On (Max) @ Id, Vgs

4.6mOhm @ 13.5A, 4.5V

Vgs(th) (Max) @ Id

1.2V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

164nC @ 10V

Vgs (Max)

±12V

Input Capacitance (Ciss) (Max) @ Vds

6495pF @ 10V

FET Feature

-

Power Dissipation (Max)

1.05W (Ta)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

PowerDI3333-8

Package / Case

8-PowerVDFN

APT10M11JVR

Microsemi

Manufacturer

Microsemi Corporation

Series

POWER MOS V®

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

100V

Current - Continuous Drain (Id) @ 25°C

144A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

-

Vgs(th) (Max) @ Id

4V @ 2.5mA

Gate Charge (Qg) (Max) @ Vgs

450nC @ 10V

Vgs (Max)

±30V

Input Capacitance (Ciss) (Max) @ Vds

10300pF @ 25V

FET Feature

-

Power Dissipation (Max)

450W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Chassis Mount

Supplier Device Package

ISOTOP®

Package / Case

SOT-227-4, miniBLOC

APT60M80L2VRG

Microsemi

Manufacturer

Microsemi Corporation

Series

POWER MOS V®

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

600V

Current - Continuous Drain (Id) @ 25°C

65A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

80mOhm @ 32.5A, 10V

Vgs(th) (Max) @ Id

4V @ 5mA

Gate Charge (Qg) (Max) @ Vgs

590nC @ 10V

Vgs (Max)

±30V

Input Capacitance (Ciss) (Max) @ Vds

13300pF @ 25V

FET Feature

-

Power Dissipation (Max)

833W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

264 MAX™ [L2]

Package / Case

TO-264-3, TO-264AA

STP2N95K5

STMicroelectronics

Manufacturer

STMicroelectronics

Series

SuperMESH5™

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

950V

Current - Continuous Drain (Id) @ 25°C

2A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

5Ohm @ 1A, 10V

Vgs(th) (Max) @ Id

5V @ 100µA

Gate Charge (Qg) (Max) @ Vgs

10nC @ 10V

Vgs (Max)

30V

Input Capacitance (Ciss) (Max) @ Vds

105pF @ 100V

FET Feature

-

Power Dissipation (Max)

45W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-220

Package / Case

TO-220-3

Recently Sold

NOIP2SE1300A-QDI

NOIP2SE1300A-QDI

ON Semiconductor

IC IMAGE SENSOR 1.3MP 48LCC

SC18IS600IBS,157

SC18IS600IBS,157

NXP

IC I2C BUS INTERFACE 24-HVQFN

MCP6002-E/SN

MCP6002-E/SN

Microchip Technology

IC OPAMP GP 2 CIRCUIT 8SOIC

FMMT618TA

FMMT618TA

Diodes Incorporated

TRANS NPN 20V 2.5A SOT23-3

SMBJ5.0CA-13-F

SMBJ5.0CA-13-F

Diodes Incorporated

TVS DIODE 5V 9.2V SMB

IHLP2525CZERR47M01

IHLP2525CZERR47M01

Vishay Dale

FIXED IND 470NH 17.5A 4.2 MOHM

MCP41010T-I/SN

MCP41010T-I/SN

Microchip Technology

IC DGTL POT 10KOHM 256TAP 8SOIC

W25Q64JVSFIQ

W25Q64JVSFIQ

Winbond Electronics

IC FLASH 64M SPI 133MHZ 16SOIC

MAX14757EUE+

MAX14757EUE+

Maxim Integrated

IC SWITCH QUAD SPST 16TSSOP

AEDS-8011-A11

AEDS-8011-A11

Broadcom

ROTARY ENCODER OPTICAL 500PPR

SP3232EEN-L/TR

SP3232EEN-L/TR

MaxLinear, Inc.

IC TRANSCEIVER FULL 2/2 16SOIC

SMLP34RGB2W3

SMLP34RGB2W3

Rohm Semiconductor

LED RGB DIFFUSED PICOLED SMD