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STU9HN65M2

STU9HN65M2

For Reference Only

Part Number STU9HN65M2
PNEDA Part # STU9HN65M2
Description MOSFET N-CH 650V 5.5A IPAK
Manufacturer STMicroelectronics
Unit Price Request a Quote
In Stock 20,802
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Mar 16 - Mar 21 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

STU9HN65M2 Resources

Brand STMicroelectronics
ECAD Module ECAD
Mfr. Part NumberSTU9HN65M2
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
STU9HN65M2, STU9HN65M2 Datasheet (Total Pages: 12, Size: 722.14 KB)
PDFSTU9HN65M2 Datasheet Cover
STU9HN65M2 Datasheet Page 2 STU9HN65M2 Datasheet Page 3 STU9HN65M2 Datasheet Page 4 STU9HN65M2 Datasheet Page 5 STU9HN65M2 Datasheet Page 6 STU9HN65M2 Datasheet Page 7 STU9HN65M2 Datasheet Page 8 STU9HN65M2 Datasheet Page 9 STU9HN65M2 Datasheet Page 10 STU9HN65M2 Datasheet Page 11

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STU9HN65M2 Specifications

ManufacturerSTMicroelectronics
SeriesMDmesh™ M2
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)650V
Current - Continuous Drain (Id) @ 25°C5.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs820mOhm @ 2.5A, 10V
Vgs(th) (Max) @ Id4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs11.5nC @ 10V
Vgs (Max)±25V
Input Capacitance (Ciss) (Max) @ Vds325pF @ 100V
FET Feature-
Power Dissipation (Max)60W (Tc)
Operating Temperature150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageI-PAK
Package / CaseTO-251-3 Short Leads, IPak, TO-251AA

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