STTH8R06DIRG
For Reference Only
| Part Number | STTH8R06DIRG |
| PNEDA Part # | STTH8R06DIRG |
| Description | DIODE GEN PURP 600V 8A TO220AC |
| Manufacturer | STMicroelectronics |
| Unit Price | Request a Quote |
| In Stock | 12,774 |
| Warehouses | Shipped from Hong Kong SAR |
| Estimated Delivery | Mar 31 - Apr 5 (Choose Expedited Shipping) |
| Guarantee | Up to 1 year [PNEDA-Warranty]* |
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Free shipping on orders over $100. PNEDA is willing to provide you with better services.
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STTH8R06DIRG Resources
| Brand | STMicroelectronics |
| ECAD Module |
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| Mfr. Part Number | STTH8R06DIRG |
| Category | Semiconductors › Diodes & Rectifiers › Rectifiers - Single |
| Datasheet |
Payment Method
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- Some orders may require a minimum amount of $100.00.
- Cheque or cash on delivery, processing may take an additional 3-5 days.
Logistics Mode
- Delivery time: At the same day (Order deadline is 2pm, HK Time).
- Delivery date: usually 2 to 7 working days.
- It is unable to appoint a date of delivery.
- Tracking number will be sent once your order has been shipped.
- It may take up to 24 hours before carriers display the info.
Notes
- Please confirm the specifications of the products when ordering.
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- Orders cannot be canceled after shipping the packages.
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STTH8R06DIRG Specifications
| Manufacturer | STMicroelectronics |
| Series | - |
| Diode Type | Standard |
| Voltage - DC Reverse (Vr) (Max) | 600V |
| Current - Average Rectified (Io) | 8A |
| Voltage - Forward (Vf) (Max) @ If | 2.9V @ 8A |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) |
| Reverse Recovery Time (trr) | 45ns |
| Current - Reverse Leakage @ Vr | 30µA @ 600V |
| Capacitance @ Vr, F | - |
| Mounting Type | Through Hole |
| Package / Case | TO-220-2 Insulated, TO-220AC |
| Supplier Device Package | TO-220AC ins |
| Operating Temperature - Junction | 175°C (Max) |
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Manufacturer Microsemi Corporation Series - Diode Type Standard Voltage - DC Reverse (Vr) (Max) 200V Current - Average Rectified (Io) 2A Voltage - Forward (Vf) (Max) @ If 1.25V @ 1A Speed Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr) 50ns Current - Reverse Leakage @ Vr 10µA @ 200V Capacitance @ Vr, F - Mounting Type Surface Mount Package / Case DO-216AA Supplier Device Package Powermite Operating Temperature - Junction -55°C ~ 150°C |
Manufacturer Vishay Semiconductor Diodes Division Series - Diode Type Standard Voltage - DC Reverse (Vr) (Max) 50V Current - Average Rectified (Io) 12A Voltage - Forward (Vf) (Max) @ If 1.35V @ 12A Speed Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr) - Current - Reverse Leakage @ Vr 3mA @ 50V Capacitance @ Vr, F - Mounting Type Chassis, Stud Mount Package / Case DO-203AA, DO-4, Stud Supplier Device Package DO-203AA Operating Temperature - Junction -65°C ~ 200°C |
Manufacturer Rohm Semiconductor Series - Diode Type Silicon Carbide Schottky Voltage - DC Reverse (Vr) (Max) 650V Current - Average Rectified (Io) 10A (DC) Voltage - Forward (Vf) (Max) @ If 1.5V @ 10A Speed No Recovery Time > 500mA (Io) Reverse Recovery Time (trr) 0ns Current - Reverse Leakage @ Vr 50µA @ 650V Capacitance @ Vr, F 500pF @ 1V, 1MHz Mounting Type Through Hole Package / Case TO-220-2 Supplier Device Package TO-220ACP Operating Temperature - Junction 175°C (Max) |
