STTA812DIRG
For Reference Only
| Part Number | STTA812DIRG |
| PNEDA Part # | STTA812DIRG |
| Description | DIODE GEN PURP 1.2KV 8A TO220AC |
| Manufacturer | STMicroelectronics |
| Unit Price | Request a Quote |
| In Stock | 2,520 |
| Warehouses | Shipped from Hong Kong SAR |
| Estimated Delivery | Nov 25 - Nov 30 (Choose Expedited Shipping) |
| Guarantee | Up to 1 year [PNEDA-Warranty]* |
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Free shipping on orders over $100. PNEDA is willing to provide you with better services.
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STTA812DIRG Resources
| Brand | STMicroelectronics |
| ECAD Module |
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| Mfr. Part Number | STTA812DIRG |
| Category | Semiconductors › Diodes & Rectifiers › Rectifiers - Single |
| Datasheet |
Payment Method
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- Some orders may require a minimum amount of $100.00.
- Cheque or cash on delivery, processing may take an additional 3-5 days.
Logistics Mode
- Delivery time: At the same day (Order deadline is 2pm, HK Time).
- Delivery date: usually 2 to 7 working days.
- It is unable to appoint a date of delivery.
- Tracking number will be sent once your order has been shipped.
- It may take up to 24 hours before carriers display the info.
Notes
- Please confirm the specifications of the products when ordering.
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- Orders cannot be canceled after shipping the packages.
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STTA812DIRG Specifications
| Manufacturer | STMicroelectronics |
| Series | TURBOSWITCH™ |
| Diode Type | Standard |
| Voltage - DC Reverse (Vr) (Max) | 1200V |
| Current - Average Rectified (Io) | 8A |
| Voltage - Forward (Vf) (Max) @ If | 2.2V @ 8A |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) |
| Reverse Recovery Time (trr) | 100ns |
| Current - Reverse Leakage @ Vr | 100µA @ 1200V |
| Capacitance @ Vr, F | - |
| Mounting Type | Through Hole |
| Package / Case | TO-220-2 Insulated, TO-220AC |
| Supplier Device Package | TO-220AC ins |
| Operating Temperature - Junction | 150°C (Max) |
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Manufacturer Panasonic Electronic Components Series - Diode Type Schottky Voltage - DC Reverse (Vr) (Max) 30V Current - Average Rectified (Io) 1A Voltage - Forward (Vf) (Max) @ If 440mV @ 1A Speed Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr) 10ns Current - Reverse Leakage @ Vr 900µA @ 30V Capacitance @ Vr, F 32pF @ 10V, 1MHz Mounting Type Surface Mount Package / Case 0402 (1005 Metric) Supplier Device Package 0402 (1005 Metric) Operating Temperature - Junction 150°C (Max) |
Manufacturer Comchip Technology Series - Diode Type Standard Voltage - DC Reverse (Vr) (Max) 400V Current - Average Rectified (Io) 2A Voltage - Forward (Vf) (Max) @ If 1.1V @ 2A Speed Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr) - Current - Reverse Leakage @ Vr 5µA @ 400V Capacitance @ Vr, F - Mounting Type Surface Mount Package / Case DO-214AA, SMB Supplier Device Package DO-214AA (SMB) Operating Temperature - Junction 150°C (Max) |
Manufacturer Vishay Semiconductor Diodes Division Series - Diode Type Standard Voltage - DC Reverse (Vr) (Max) 400V Current - Average Rectified (Io) 60A Voltage - Forward (Vf) (Max) @ If 1.3V @ 60A Speed Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr) 180ns Current - Reverse Leakage @ Vr 100µA @ 400V Capacitance @ Vr, F - Mounting Type Through Hole Package / Case TO-247-2 Supplier Device Package TO-247AC Modified Operating Temperature - Junction -40°C ~ 150°C |
