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STT6N3LLH6

STT6N3LLH6

For Reference Only

Part Number STT6N3LLH6
PNEDA Part # STT6N3LLH6
Description MOSFET N-CH 30V 6A SOT23-6
Manufacturer STMicroelectronics
Unit Price Request a Quote
In Stock 4,284
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Nov 27 - Dec 2 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

STT6N3LLH6 Resources

Brand STMicroelectronics
ECAD Module ECAD
Mfr. Part NumberSTT6N3LLH6
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
STT6N3LLH6, STT6N3LLH6 Datasheet (Total Pages: 12, Size: 1,055.02 KB)
PDFSTT6N3LLH6 Datasheet Cover
STT6N3LLH6 Datasheet Page 2 STT6N3LLH6 Datasheet Page 3 STT6N3LLH6 Datasheet Page 4 STT6N3LLH6 Datasheet Page 5 STT6N3LLH6 Datasheet Page 6 STT6N3LLH6 Datasheet Page 7 STT6N3LLH6 Datasheet Page 8 STT6N3LLH6 Datasheet Page 9 STT6N3LLH6 Datasheet Page 10 STT6N3LLH6 Datasheet Page 11

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STT6N3LLH6 Specifications

ManufacturerSTMicroelectronics
SeriesDeepGATE™, STripFET™ VI
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)30V
Current - Continuous Drain (Id) @ 25°C6A (Tc)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Rds On (Max) @ Id, Vgs25mOhm @ 3A, 10V
Vgs(th) (Max) @ Id1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs3.6nC @ 4.5V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds283pF @ 24V
FET Feature-
Power Dissipation (Max)1.6W (Tc)
Operating Temperature150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageSOT-23-6
Package / CaseSOT-23-6

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