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STT4P3LLH6

STT4P3LLH6

For Reference Only

Part Number STT4P3LLH6
PNEDA Part # STT4P3LLH6
Description MOSFET P-CH 30V 4A SOT23-6
Manufacturer STMicroelectronics
Unit Price Request a Quote
In Stock 22,800
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Nov 26 - Dec 1 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

STT4P3LLH6 Resources

Brand STMicroelectronics
ECAD Module ECAD
Mfr. Part NumberSTT4P3LLH6
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
STT4P3LLH6, STT4P3LLH6 Datasheet (Total Pages: 12, Size: 435.11 KB)
PDFSTT4P3LLH6 Datasheet Cover
STT4P3LLH6 Datasheet Page 2 STT4P3LLH6 Datasheet Page 3 STT4P3LLH6 Datasheet Page 4 STT4P3LLH6 Datasheet Page 5 STT4P3LLH6 Datasheet Page 6 STT4P3LLH6 Datasheet Page 7 STT4P3LLH6 Datasheet Page 8 STT4P3LLH6 Datasheet Page 9 STT4P3LLH6 Datasheet Page 10 STT4P3LLH6 Datasheet Page 11

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STT4P3LLH6 Specifications

ManufacturerSTMicroelectronics
SeriesDeepGATE™, STripFET™ H6
FET TypeP-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)30V
Current - Continuous Drain (Id) @ 25°C4A (Ta)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Rds On (Max) @ Id, Vgs56mOhm @ 2A, 10V
Vgs(th) (Max) @ Id2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs6nC @ 4.5V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds639pF @ 25V
FET Feature-
Power Dissipation (Max)1.6W (Ta)
Operating Temperature150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageSOT-23-6
Package / CaseSOT-23-6

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