Certifications

iso9001
iso14001
icas
Delivery
security
warranty
roiginal
RoHS
UL
Millions of Electronic Parts In Stock. Price & Lead Time Quotes within 24 Hours.

STT3P2UH7

STT3P2UH7

For Reference Only

Part Number STT3P2UH7
PNEDA Part # STT3P2UH7
Description MOSFET P-CH 20V 3A SOT23-6
Manufacturer STMicroelectronics
Unit Price Request a Quote
In Stock 8,082
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Nov 24 - Nov 29 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

STT3P2UH7 Resources

Brand STMicroelectronics
ECAD Module ECAD
Mfr. Part NumberSTT3P2UH7
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single

Payment Method

TT Unionpay paypal paypalwtcreditcard alipay wu
  • Penda is not limited to cash transfers. Checks and bill transfers are also accepted.
  • If you need the detailed invoice or tax ID,please email us.
  • Some orders may require a minimum amount of $100.00.
  • Cheque or cash on delivery, processing may take an additional 3-5 days.

Logistics Mode

TNT UPS Fedex EMS DHL
  • Delivery time: At the same day (Order deadline is 2pm, HK Time).
  • Delivery date: usually 2 to 7 working days.
  • It is unable to appoint a date of delivery.
  • Tracking number will be sent once your order has been shipped.
  • It may take up to 24 hours before carriers display the info.

Notes

  • Please confirm the specifications of the products when ordering.
  • If you have special order instructions,please note it on the ordering pages.
  • Registered users can log in to the account to view the order status.
  • You can email us to change the order details before shipment.
  • Orders cannot be canceled after shipping the packages.

At PNEDA, we strive to be the industry leader by quickly and reliably supplying high-quality electronic components to our clients.

Our approach is built around proving our clients with three key advantages:

  • Prompt Responsiveness

    Our team responds quickly to your requests, and gets to work immediately to find your parts.

  • Guaranteed Quality

    Our quality-control processes guard against counterfeits while ensuring reliability and performance.

  • Global Access

    Our worldwide network of trusted resources allows us to find and deliver the specific parts you need.

Hot search vocabulary

  • STT3P2UH7 Datasheet
  • where to find STT3P2UH7
  • STMicroelectronics

  • STMicroelectronics STT3P2UH7
  • STT3P2UH7 PDF Datasheet
  • STT3P2UH7 Stock

  • STT3P2UH7 Pinout
  • Datasheet STT3P2UH7
  • STT3P2UH7 Supplier

  • STMicroelectronics Distributor
  • STT3P2UH7 Price
  • STT3P2UH7 Distributor

STT3P2UH7 Specifications

ManufacturerSTMicroelectronics
SeriesSTripFET™
FET TypeP-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)20V
Current - Continuous Drain (Id) @ 25°C3A (Tc)
Drive Voltage (Max Rds On, Min Rds On)1.8V, 4.5V
Rds On (Max) @ Id, Vgs100mOhm @ 1.5A, 4.5V
Vgs(th) (Max) @ Id1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs4.8nC @ 4.5V
Vgs (Max)±8V
Input Capacitance (Ciss) (Max) @ Vds510pF @ 10V
FET Feature-
Power Dissipation (Max)1.6W (Tc)
Operating Temperature150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageSOT-23-6
Package / CaseSOT-23-6

The Products You May Be Interested In

NTD4858N-1G

ON Semiconductor

Manufacturer

ON Semiconductor

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

25V

Current - Continuous Drain (Id) @ 25°C

11.2A (Ta), 73A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

6.2mOhm @ 30A, 10V

Vgs(th) (Max) @ Id

2.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

19.2nC @ 4.5V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

1563pF @ 12V

FET Feature

-

Power Dissipation (Max)

1.3W (Ta), 54.5W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

I-PAK

Package / Case

TO-251-3 Short Leads, IPak, TO-251AA

IRLL1503

Infineon Technologies

Manufacturer

Infineon Technologies

Series

HEXFET®

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

30V

Current - Continuous Drain (Id) @ 25°C

75A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

-

Rds On (Max) @ Id, Vgs

3.3mOhm @ 140A, 10V

Vgs(th) (Max) @ Id

4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

200nC @ 10V

Vgs (Max)

-

Input Capacitance (Ciss) (Max) @ Vds

5730pF @ 25V

FET Feature

-

Power Dissipation (Max)

-

Operating Temperature

-

Mounting Type

Through Hole

Supplier Device Package

SOT-223

Package / Case

TO-261-4, TO-261AA

NTMJS1D0N04CTWG

ON Semiconductor

Manufacturer

ON Semiconductor

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

40V

Current - Continuous Drain (Id) @ 25°C

46A (Ta), 300A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

0.92mOhm @ 50A, 10V

Vgs(th) (Max) @ Id

3.5V @ 190µA

Gate Charge (Qg) (Max) @ Vgs

86nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

6100pF @ 25V

FET Feature

-

Power Dissipation (Max)

3.9W (Ta), 166W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

8-LFPAK

Package / Case

8-PowerSMD, Gull Wing

IRF9540STRR

Vishay Siliconix

Manufacturer

Vishay Siliconix

Series

-

FET Type

P-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

100V

Current - Continuous Drain (Id) @ 25°C

19A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

200mOhm @ 11A, 10V

Vgs(th) (Max) @ Id

4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

61nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

1400pF @ 25V

FET Feature

-

Power Dissipation (Max)

3.7W (Ta), 150W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

D2PAK

Package / Case

TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

IXFX55N50

IXYS

Manufacturer

IXYS

Series

HiPerFET™

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

500V

Current - Continuous Drain (Id) @ 25°C

55A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

80mOhm @ 500mA, 10V

Vgs(th) (Max) @ Id

4.5V @ 8mA

Gate Charge (Qg) (Max) @ Vgs

330nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

9400pF @ 25V

FET Feature

-

Power Dissipation (Max)

625W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

PLUS247™-3

Package / Case

TO-247-3

Recently Sold

SIR424DP-T1-GE3

SIR424DP-T1-GE3

Vishay Siliconix

MOSFET N-CH 20V 30A PPAK SO-8

ADM2491EBRWZ

ADM2491EBRWZ

Analog Devices

DGTL ISO 5KV RS422/RS485 16SOIC

P6KE150A

P6KE150A

Taiwan Semiconductor Corporation

TVS DIODE 128V 207V DO15

NHD-0420CW-AW3

NHD-0420CW-AW3

Newhaven Display Intl

4X20 WHITE SLIM CHARACTER OLED

BAT43WS-7-F

BAT43WS-7-F

Diodes Incorporated

DIODE SCHOTTKY 30V 200MA SOD323

MP24833GN-Z

MP24833GN-Z

Monolithic Power Systems Inc.

IC LED DRIVER

W25Q64JVSFIQ

W25Q64JVSFIQ

Winbond Electronics

IC FLASH 64M SPI 133MHZ 16SOIC

B340A-E3/61T

B340A-E3/61T

Vishay Semiconductor Diodes Division

DIODE SCHOTTKY 40V 3A DO214AC

NE3509M04-A

NE3509M04-A

CEL

FET RF 4V 2GHZ 4-SMINI

XC6SLX100-3CSG484I

XC6SLX100-3CSG484I

Xilinx

IC FPGA 338 I/O 484CSBGA

IHLP2525CZERR47M01

IHLP2525CZERR47M01

Vishay Dale

FIXED IND 470NH 17.5A 4.2 MOHM

ADM1087AKSZ-REEL7

ADM1087AKSZ-REEL7

Analog Devices

IC SIMPLE SEQUENCER OD SC70-6