Certifications

iso9001
iso14001
icas
Delivery
security
warranty
roiginal
RoHS
UL
Millions of Electronic Parts In Stock. Price & Lead Time Quotes within 24 Hours.

STQ3N45K3-AP

STQ3N45K3-AP

For Reference Only

Part Number STQ3N45K3-AP
PNEDA Part # STQ3N45K3-AP
Description MOSFET N-CH 450V 600MA TO-92
Manufacturer STMicroelectronics
Unit Price Request a Quote
In Stock 5,328
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Feb 19 - Feb 24 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

STQ3N45K3-AP Resources

Brand STMicroelectronics
ECAD Module ECAD
Mfr. Part NumberSTQ3N45K3-AP
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
STQ3N45K3-AP, STQ3N45K3-AP Datasheet (Total Pages: 14, Size: 871.64 KB)
PDFSTQ3N45K3-AP Datasheet Cover
STQ3N45K3-AP Datasheet Page 2 STQ3N45K3-AP Datasheet Page 3 STQ3N45K3-AP Datasheet Page 4 STQ3N45K3-AP Datasheet Page 5 STQ3N45K3-AP Datasheet Page 6 STQ3N45K3-AP Datasheet Page 7 STQ3N45K3-AP Datasheet Page 8 STQ3N45K3-AP Datasheet Page 9 STQ3N45K3-AP Datasheet Page 10 STQ3N45K3-AP Datasheet Page 11

Payment Method

TT Unionpay paypal paypalwtcreditcard alipay wu
  • Penda is not limited to cash transfers. Checks and bill transfers are also accepted.
  • If you need the detailed invoice or tax ID,please email us.
  • Some orders may require a minimum amount of $100.00.
  • Cheque or cash on delivery, processing may take an additional 3-5 days.

Logistics Mode

TNT UPS Fedex EMS DHL
  • Delivery time: At the same day (Order deadline is 2pm, HK Time).
  • Delivery date: usually 2 to 7 working days.
  • It is unable to appoint a date of delivery.
  • Tracking number will be sent once your order has been shipped.
  • It may take up to 24 hours before carriers display the info.

Notes

  • Please confirm the specifications of the products when ordering.
  • If you have special order instructions,please note it on the ordering pages.
  • Registered users can log in to the account to view the order status.
  • You can email us to change the order details before shipment.
  • Orders cannot be canceled after shipping the packages.

At PNEDA, we strive to be the industry leader by quickly and reliably supplying high-quality electronic components to our clients.

Our approach is built around proving our clients with three key advantages:

  • Prompt Responsiveness

    Our team responds quickly to your requests, and gets to work immediately to find your parts.

  • Guaranteed Quality

    Our quality-control processes guard against counterfeits while ensuring reliability and performance.

  • Global Access

    Our worldwide network of trusted resources allows us to find and deliver the specific parts you need.

Hot search vocabulary

  • STQ3N45K3-AP Datasheet
  • where to find STQ3N45K3-AP
  • STMicroelectronics

  • STMicroelectronics STQ3N45K3-AP
  • STQ3N45K3-AP PDF Datasheet
  • STQ3N45K3-AP Stock

  • STQ3N45K3-AP Pinout
  • Datasheet STQ3N45K3-AP
  • STQ3N45K3-AP Supplier

  • STMicroelectronics Distributor
  • STQ3N45K3-AP Price
  • STQ3N45K3-AP Distributor

STQ3N45K3-AP Specifications

ManufacturerSTMicroelectronics
SeriesSuperMESH3™
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)450V
Current - Continuous Drain (Id) @ 25°C600mA (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs3.8Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id4.5V @ 50µA
Gate Charge (Qg) (Max) @ Vgs6nC @ 10V
Vgs (Max)±30V
Input Capacitance (Ciss) (Max) @ Vds150pF @ 25V
FET Feature-
Power Dissipation (Max)3W (Tc)
Operating Temperature150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-92-3
Package / CaseTO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

The Products You May Be Interested In

FDMC010N08LC

ON Semiconductor

Manufacturer

ON Semiconductor

Series

PowerTrench®

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

80V

Current - Continuous Drain (Id) @ 25°C

11A (Ta), 50A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

10.9mOhm @ 16A, 10V

Vgs(th) (Max) @ Id

3V @ 90µA

Gate Charge (Qg) (Max) @ Vgs

31nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

2135pF @ 40V

FET Feature

-

Power Dissipation (Max)

2.3W (Ta), 52W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

8-PQFN (3.3x3.3)

Package / Case

8-PowerWDFN

IRF3709ZCSTRR

Infineon Technologies

Manufacturer

Infineon Technologies

Series

HEXFET®

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

30V

Current - Continuous Drain (Id) @ 25°C

87A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

6.3mOhm @ 21A, 10V

Vgs(th) (Max) @ Id

2.25V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

26nC @ 4.5V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

2130pF @ 15V

FET Feature

-

Power Dissipation (Max)

79W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

D2PAK

Package / Case

TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

IRF740LCSTRR

Vishay Siliconix

Manufacturer

Vishay Siliconix

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

400V

Current - Continuous Drain (Id) @ 25°C

10A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

550mOhm @ 6A, 10V

Vgs(th) (Max) @ Id

4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

39nC @ 10V

Vgs (Max)

±30V

Input Capacitance (Ciss) (Max) @ Vds

1100pF @ 25V

FET Feature

-

Power Dissipation (Max)

-

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

D2PAK

Package / Case

TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

IXFX26N90

IXYS

Manufacturer

IXYS

Series

HiPerFET™

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

900V

Current - Continuous Drain (Id) @ 25°C

26A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

300mOhm @ 13A, 10V

Vgs(th) (Max) @ Id

5V @ 8mA

Gate Charge (Qg) (Max) @ Vgs

240nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

10800pF @ 25V

FET Feature

-

Power Dissipation (Max)

560W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

PLUS247™-3

Package / Case

TO-247-3

TSM120N06LCR RLG

Taiwan Semiconductor Corporation

Manufacturer

Taiwan Semiconductor Corporation

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

60V

Current - Continuous Drain (Id) @ 25°C

54A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

12mOhm @ 10A, 10V

Vgs(th) (Max) @ Id

2.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

36.5nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

2116pF @ 30V

FET Feature

-

Power Dissipation (Max)

69W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

8-PDFN (5x6)

Package / Case

8-PowerTDFN

Recently Sold

TAJE687K006RNJ

TAJE687K006RNJ

CAP TANT 680UF 10% 6.3V 2917

IS66WVE4M16EALL-70BLI

IS66WVE4M16EALL-70BLI

ISSI, Integrated Silicon Solution Inc

IC PSRAM 64M PARALLEL 48TFBGA

MAX6675ISA+T

MAX6675ISA+T

Maxim Integrated

IC THERMOCOUP TO DGTL 8-SOIC

NC7SB3157P6X

NC7SB3157P6X

ON Semiconductor

IC SWITCH SPDT SC70-6

ATA6625C-GAQW

ATA6625C-GAQW

Microchip Technology

IC TRANSCEIVER 1/1 8SO

LM393DR

LM393DR

Rohm Semiconductor

IC COMPARATOR DUAL 0.8MA 8-SOIC

PIC18F1230-I/SO

PIC18F1230-I/SO

Microchip Technology

IC MCU 8BIT 4KB FLASH 18SOIC

MPC8306SVMADDCA

MPC8306SVMADDCA

NXP

IC MPU MPC83XX 266MHZ 369BGA

XC3SD3400A-4CSG484LI

XC3SD3400A-4CSG484LI

Xilinx

IC FPGA 309 I/O 484CSBGA

XC3S50A-4VQG100C

XC3S50A-4VQG100C

Xilinx

IC FPGA 68 I/O 100VQFP

D5V0L4B5SO-7

D5V0L4B5SO-7

Diodes Incorporated

TVS DIODE 5V 14V SOT353

NLAS4599DFT2G

NLAS4599DFT2G

ON Semiconductor

IC SWITCH SPDT SC88