Certifications

iso9001
iso14001
icas
Delivery
security
warranty
roiginal
RoHS
UL
Millions of Electronic Parts In Stock. Price & Lead Time Quotes within 24 Hours.

STP80PF55

STP80PF55

For Reference Only

Part Number STP80PF55
PNEDA Part # STP80PF55
Description MOSFET P-CH 55V 80A TO-220
Manufacturer STMicroelectronics
Unit Price Request a Quote
In Stock 6,624
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Mar 31 - Apr 5 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

STP80PF55 Resources

Brand STMicroelectronics
ECAD Module ECAD
Mfr. Part NumberSTP80PF55
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single

Payment Method

TT Unionpay paypal paypalwtcreditcard alipay wu
  • Penda is not limited to cash transfers. Checks and bill transfers are also accepted.
  • If you need the detailed invoice or tax ID,please email us.
  • Some orders may require a minimum amount of $100.00.
  • Cheque or cash on delivery, processing may take an additional 3-5 days.

Logistics Mode

TNT UPS Fedex EMS DHL
  • Delivery time: At the same day (Order deadline is 2pm, HK Time).
  • Delivery date: usually 2 to 7 working days.
  • It is unable to appoint a date of delivery.
  • Tracking number will be sent once your order has been shipped.
  • It may take up to 24 hours before carriers display the info.

Notes

  • Please confirm the specifications of the products when ordering.
  • If you have special order instructions,please note it on the ordering pages.
  • Registered users can log in to the account to view the order status.
  • You can email us to change the order details before shipment.
  • Orders cannot be canceled after shipping the packages.

At PNEDA, we strive to be the industry leader by quickly and reliably supplying high-quality electronic components to our clients.

Our approach is built around proving our clients with three key advantages:

  • Prompt Responsiveness

    Our team responds quickly to your requests, and gets to work immediately to find your parts.

  • Guaranteed Quality

    Our quality-control processes guard against counterfeits while ensuring reliability and performance.

  • Global Access

    Our worldwide network of trusted resources allows us to find and deliver the specific parts you need.

Hot search vocabulary

  • STP80PF55 Datasheet
  • where to find STP80PF55
  • STMicroelectronics

  • STMicroelectronics STP80PF55
  • STP80PF55 PDF Datasheet
  • STP80PF55 Stock

  • STP80PF55 Pinout
  • Datasheet STP80PF55
  • STP80PF55 Supplier

  • STMicroelectronics Distributor
  • STP80PF55 Price
  • STP80PF55 Distributor

STP80PF55 Specifications

ManufacturerSTMicroelectronics
SeriesSTripFET™ II
FET TypeP-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)55V
Current - Continuous Drain (Id) @ 25°C80A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs18mOhm @ 40A, 10V
Vgs(th) (Max) @ Id4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs258nC @ 10V
Vgs (Max)±16V
Input Capacitance (Ciss) (Max) @ Vds5500pF @ 25V
FET Feature-
Power Dissipation (Max)300W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-220AB
Package / CaseTO-220-3

The Products You May Be Interested In

TK20A60W5,S5VX

Toshiba Semiconductor and Storage

Manufacturer

Toshiba Semiconductor and Storage

Series

DTMOSIV

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

600V

Current - Continuous Drain (Id) @ 25°C

20A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

175mOhm @ 10A, 10V

Vgs(th) (Max) @ Id

4.5V @ 1mA

Gate Charge (Qg) (Max) @ Vgs

55nC @ 10V

Vgs (Max)

±30V

Input Capacitance (Ciss) (Max) @ Vds

1800pF @ 300V

FET Feature

-

Power Dissipation (Max)

45W (Tc)

Operating Temperature

150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-220SIS

Package / Case

TO-220-3 Full Pack

RJK0629DPE-00#J3

Renesas Electronics America

Manufacturer

Renesas Electronics America

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

60V

Current - Continuous Drain (Id) @ 25°C

85A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

4.5mOhm @ 43A, 10V

Vgs(th) (Max) @ Id

-

Gate Charge (Qg) (Max) @ Vgs

85nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

4100pF @ 10V

FET Feature

-

Power Dissipation (Max)

100W (Tc)

Operating Temperature

150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

4-LDPAK

Package / Case

SC-83

IRFR24N10D

Vishay Siliconix

Manufacturer

Vishay Siliconix

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

100V

Current - Continuous Drain (Id) @ 25°C

-

Drive Voltage (Max Rds On, Min Rds On)

-

Rds On (Max) @ Id, Vgs

-

Vgs(th) (Max) @ Id

-

Gate Charge (Qg) (Max) @ Vgs

-

Vgs (Max)

-

Input Capacitance (Ciss) (Max) @ Vds

-

FET Feature

-

Power Dissipation (Max)

-

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

D-Pak

Package / Case

TO-252-3, DPak (2 Leads + Tab), SC-63

FQPF33N10L

ON Semiconductor

Manufacturer

ON Semiconductor

Series

QFET®

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

100V

Current - Continuous Drain (Id) @ 25°C

18A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

5V, 10V

Rds On (Max) @ Id, Vgs

52mOhm @ 9A, 10V

Vgs(th) (Max) @ Id

2V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

40nC @ 5V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

1630pF @ 25V

FET Feature

-

Power Dissipation (Max)

41W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-220F

Package / Case

TO-220-3 Full Pack

GP2M010A065H

Global Power Technologies Group

Manufacturer

Global Power Technologies Group

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

650V

Current - Continuous Drain (Id) @ 25°C

9.5A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

820mOhm @ 4.75A, 10V

Vgs(th) (Max) @ Id

5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

36nC @ 10V

Vgs (Max)

±30V

Input Capacitance (Ciss) (Max) @ Vds

1670pF @ 25V

FET Feature

-

Power Dissipation (Max)

198W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-220

Package / Case

TO-220-3

Recently Sold

BA2904SFV-E2

BA2904SFV-E2

Rohm Semiconductor

IC OPAMP GP 2 CIRCUIT 8SSOPB

CMS05(TE12L,Q,M)

CMS05(TE12L,Q,M)

Toshiba Semiconductor and Storage

DIODE SCHOTTKY 30V 5A MFLAT

142.6185.5106

142.6185.5106

Littelfuse

FUSE AUTOMOTIVE 10A 58VDC BLADE

TAJE477K010RNJ

TAJE477K010RNJ

CAP TANT 470UF 10% 10V 2917

NUP2201MR6T1G

NUP2201MR6T1G

ON Semiconductor

TVS DIODE 5V 20V 6TSOP

E-TEA3717DP

E-TEA3717DP

STMicroelectronics

IC MOTOR DRVR BIPOLAR 16POWERDIP

SBR3U60P1-7

SBR3U60P1-7

Diodes Incorporated

DIODE SBR 60V 3A POWERDI123

FP3-R47-R

FP3-R47-R

Eaton - Electronics Division

FIXED IND 470NH 10.9A 3.67 MOHM

ST72F321BAR9T6

ST72F321BAR9T6

STMicroelectronics

IC MCU 8BIT 60KB FLASH 64LQFP

JANTX2N4092

JANTX2N4092

Microsemi

JFET N-CH 40V 360MW TO-18

W25X40CLSSIG

W25X40CLSSIG

Winbond Electronics

IC FLASH 4M SPI 104MHZ 8SOIC

SSC9522S

SSC9522S

Sanken

IC CTLR QUASI RES AC/DC 8SOP