Certifications

iso9001
iso14001
icas
Delivery
security
warranty
roiginal
RoHS
UL
Millions of Electronic Parts In Stock. Price & Lead Time Quotes within 24 Hours.

STP60NE06-16

STP60NE06-16

For Reference Only

Part Number STP60NE06-16
PNEDA Part # STP60NE06-16
Description MOSFET N-CH 60V 60A TO-220
Manufacturer STMicroelectronics
Unit Price Request a Quote
In Stock 4,068
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Mar 30 - Apr 4 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

STP60NE06-16 Resources

Brand STMicroelectronics
ECAD Module ECAD
Mfr. Part NumberSTP60NE06-16
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
STP60NE06-16, STP60NE06-16 Datasheet (Total Pages: 11, Size: 283.41 KB)
PDFSTP60NE06-16 Datasheet Cover
STP60NE06-16 Datasheet Page 2 STP60NE06-16 Datasheet Page 3 STP60NE06-16 Datasheet Page 4 STP60NE06-16 Datasheet Page 5 STP60NE06-16 Datasheet Page 6 STP60NE06-16 Datasheet Page 7 STP60NE06-16 Datasheet Page 8 STP60NE06-16 Datasheet Page 9 STP60NE06-16 Datasheet Page 10 STP60NE06-16 Datasheet Page 11

Payment Method

TT Unionpay paypal paypalwtcreditcard alipay wu
  • Penda is not limited to cash transfers. Checks and bill transfers are also accepted.
  • If you need the detailed invoice or tax ID,please email us.
  • Some orders may require a minimum amount of $100.00.
  • Cheque or cash on delivery, processing may take an additional 3-5 days.

Logistics Mode

TNT UPS Fedex EMS DHL
  • Delivery time: At the same day (Order deadline is 2pm, HK Time).
  • Delivery date: usually 2 to 7 working days.
  • It is unable to appoint a date of delivery.
  • Tracking number will be sent once your order has been shipped.
  • It may take up to 24 hours before carriers display the info.

Notes

  • Please confirm the specifications of the products when ordering.
  • If you have special order instructions,please note it on the ordering pages.
  • Registered users can log in to the account to view the order status.
  • You can email us to change the order details before shipment.
  • Orders cannot be canceled after shipping the packages.

At PNEDA, we strive to be the industry leader by quickly and reliably supplying high-quality electronic components to our clients.

Our approach is built around proving our clients with three key advantages:

  • Prompt Responsiveness

    Our team responds quickly to your requests, and gets to work immediately to find your parts.

  • Guaranteed Quality

    Our quality-control processes guard against counterfeits while ensuring reliability and performance.

  • Global Access

    Our worldwide network of trusted resources allows us to find and deliver the specific parts you need.

Hot search vocabulary

  • STP60NE06-16 Datasheet
  • where to find STP60NE06-16
  • STMicroelectronics

  • STMicroelectronics STP60NE06-16
  • STP60NE06-16 PDF Datasheet
  • STP60NE06-16 Stock

  • STP60NE06-16 Pinout
  • Datasheet STP60NE06-16
  • STP60NE06-16 Supplier

  • STMicroelectronics Distributor
  • STP60NE06-16 Price
  • STP60NE06-16 Distributor

STP60NE06-16 Specifications

ManufacturerSTMicroelectronics
Series-
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)60V
Current - Continuous Drain (Id) @ 25°C60A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs16mOhm @ 30A, 10V
Vgs(th) (Max) @ Id4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs160nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds6200pF @ 25V
FET Feature-
Power Dissipation (Max)150W (Tc)
Operating Temperature175°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-220AB
Package / CaseTO-220-3

The Products You May Be Interested In

BSS209PW

Infineon Technologies

Manufacturer

Infineon Technologies

Series

OptiMOS™

FET Type

P-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

20V

Current - Continuous Drain (Id) @ 25°C

580mA (Ta)

Drive Voltage (Max Rds On, Min Rds On)

2.5V, 4.5V

Rds On (Max) @ Id, Vgs

550mOhm @ 580mA, 4.5V

Vgs(th) (Max) @ Id

1.2V @ 3.5µA

Gate Charge (Qg) (Max) @ Vgs

1.38nC @ 4.5V

Vgs (Max)

±12V

Input Capacitance (Ciss) (Max) @ Vds

89.9pF @ 15V

FET Feature

-

Power Dissipation (Max)

520mW (Ta)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

PG-SOT323-3

Package / Case

SC-70, SOT-323

FDMC4436BZ

ON Semiconductor

Manufacturer

ON Semiconductor

Series

-

FET Type

-

Technology

-

Drain to Source Voltage (Vdss)

-

Current - Continuous Drain (Id) @ 25°C

-

Drive Voltage (Max Rds On, Min Rds On)

-

Rds On (Max) @ Id, Vgs

-

Vgs(th) (Max) @ Id

-

Gate Charge (Qg) (Max) @ Vgs

-

Vgs (Max)

-

Input Capacitance (Ciss) (Max) @ Vds

-

FET Feature

-

Power Dissipation (Max)

-

Operating Temperature

-

Mounting Type

-

Supplier Device Package

-

Package / Case

-

AUIRLU2905

Infineon Technologies

Manufacturer

Infineon Technologies

Series

HEXFET®

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

55V

Current - Continuous Drain (Id) @ 25°C

42A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

4V, 10V

Rds On (Max) @ Id, Vgs

27mOhm @ 25A, 10V

Vgs(th) (Max) @ Id

2V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

48nC @ 5V

Vgs (Max)

±16V

Input Capacitance (Ciss) (Max) @ Vds

1700pF @ 25V

FET Feature

-

Power Dissipation (Max)

110W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

I-PAK

Package / Case

TO-251-3 Short Leads, IPak, TO-251AA

FDG330P

ON Semiconductor

Manufacturer

ON Semiconductor

Series

PowerTrench®

FET Type

P-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

12V

Current - Continuous Drain (Id) @ 25°C

2A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

1.8V, 4.5V

Rds On (Max) @ Id, Vgs

110mOhm @ 2A, 4.5V

Vgs(th) (Max) @ Id

1.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

7nC @ 4.5V

Vgs (Max)

±8V

Input Capacitance (Ciss) (Max) @ Vds

477pF @ 6V

FET Feature

-

Power Dissipation (Max)

750mW (Ta)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

SC-88 (SC-70-6)

Package / Case

6-TSSOP, SC-88, SOT-363

TPCF8101(TE85L,F,M

Toshiba Semiconductor and Storage

Manufacturer

Toshiba Semiconductor and Storage

Series

U-MOSIII

FET Type

P-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

12V

Current - Continuous Drain (Id) @ 25°C

6A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

1.8V, 4.5V

Rds On (Max) @ Id, Vgs

28mOhm @ 3A, 4.5V

Vgs(th) (Max) @ Id

1.2V @ 200µA

Gate Charge (Qg) (Max) @ Vgs

18nC @ 5V

Vgs (Max)

±8V

Input Capacitance (Ciss) (Max) @ Vds

1600pF @ 10V

FET Feature

-

Power Dissipation (Max)

700mW (Ta)

Operating Temperature

150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

VS-8 (2.9x1.5)

Package / Case

8-SMD, Flat Lead

Recently Sold

ADV7125WBSTZ170

ADV7125WBSTZ170

Analog Devices

IC DAC 8BIT A-OUT 48LQFP

LT3480EDD#TRPBF

LT3480EDD#TRPBF

Linear Technology/Analog Devices

IC REG BUCK ADJUSTABLE 2A 10DFN

PTN3363BSMP

PTN3363BSMP

NXP

IC DVI/HDMI LVL SHIFTER 32HVQFN

AD8062ARZ

AD8062ARZ

Analog Devices

IC OPAMP VFB 2 CIRCUIT 8SOIC

TCS-DL004-500-WH

TCS-DL004-500-WH

Bourns

SUPPRESSOR TCS DUAL 40V 500MA

BTS723GWXUMA1

BTS723GWXUMA1

Infineon Technologies

IC PWR SW 2CH 58V HISIDE PDSO14

PIC18F2550-I/SO

PIC18F2550-I/SO

Microchip Technology

IC MCU 8BIT 32KB FLASH 28SOIC

MC7905CT

MC7905CT

ON Semiconductor

IC REG LINEAR -5V 1A TO220AB

MIC2025-1YM

MIC2025-1YM

Microchip Technology

IC SW DISTRIBUTION 1CHAN 8SOIC

RO-1212S

RO-1212S

Recom Power

DC DC CONVERTER 12V 1W

BLM31PG500SN1L

BLM31PG500SN1L

Murata

FERRITE BEAD 50 OHM 1206 1LN

WSL1206R0100FEA

WSL1206R0100FEA

Vishay Dale

RES 0.01 OHM 1% 1/4W 1206