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STP200N4F3

STP200N4F3

For Reference Only

Part Number STP200N4F3
PNEDA Part # STP200N4F3
Description MOSFET N-CH 40V 120A TO-220
Manufacturer STMicroelectronics
Unit Price Request a Quote
In Stock 3,636
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Mar 16 - Mar 21 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

STP200N4F3 Resources

Brand STMicroelectronics
ECAD Module ECAD
Mfr. Part NumberSTP200N4F3
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
STP200N4F3, STP200N4F3 Datasheet (Total Pages: 14, Size: 412.3 KB)
PDFSTP200N4F3 Datasheet Cover
STP200N4F3 Datasheet Page 2 STP200N4F3 Datasheet Page 3 STP200N4F3 Datasheet Page 4 STP200N4F3 Datasheet Page 5 STP200N4F3 Datasheet Page 6 STP200N4F3 Datasheet Page 7 STP200N4F3 Datasheet Page 8 STP200N4F3 Datasheet Page 9 STP200N4F3 Datasheet Page 10 STP200N4F3 Datasheet Page 11

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STP200N4F3 Specifications

ManufacturerSTMicroelectronics
SeriesSTripFET™
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)40V
Current - Continuous Drain (Id) @ 25°C120A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs4.4mOhm @ 80A, 10V
Vgs(th) (Max) @ Id4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs75nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds5100pF @ 25V
FET Feature-
Power Dissipation (Max)300W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-220-3
Package / CaseTO-220-3

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