Certifications

iso9001
iso14001
icas
Delivery
security
warranty
roiginal
RoHS
UL
Millions of Electronic Parts In Stock. Price & Lead Time Quotes within 24 Hours.

STP19NB20

STP19NB20

For Reference Only

Part Number STP19NB20
PNEDA Part # STP19NB20
Description MOSFET N-CH 200V 19A TO-220
Manufacturer STMicroelectronics
Unit Price Request a Quote
In Stock 2,340
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Feb 19 - Feb 24 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

STP19NB20 Resources

Brand STMicroelectronics
ECAD Module ECAD
Mfr. Part NumberSTP19NB20
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
STP19NB20, STP19NB20 Datasheet (Total Pages: 12, Size: 554.64 KB)
PDFSTP19NB20 Datasheet Cover
STP19NB20 Datasheet Page 2 STP19NB20 Datasheet Page 3 STP19NB20 Datasheet Page 4 STP19NB20 Datasheet Page 5 STP19NB20 Datasheet Page 6 STP19NB20 Datasheet Page 7 STP19NB20 Datasheet Page 8 STP19NB20 Datasheet Page 9 STP19NB20 Datasheet Page 10 STP19NB20 Datasheet Page 11

Payment Method

TT Unionpay paypal paypalwtcreditcard alipay wu
  • Penda is not limited to cash transfers. Checks and bill transfers are also accepted.
  • If you need the detailed invoice or tax ID,please email us.
  • Some orders may require a minimum amount of $100.00.
  • Cheque or cash on delivery, processing may take an additional 3-5 days.

Logistics Mode

TNT UPS Fedex EMS DHL
  • Delivery time: At the same day (Order deadline is 2pm, HK Time).
  • Delivery date: usually 2 to 7 working days.
  • It is unable to appoint a date of delivery.
  • Tracking number will be sent once your order has been shipped.
  • It may take up to 24 hours before carriers display the info.

Notes

  • Please confirm the specifications of the products when ordering.
  • If you have special order instructions,please note it on the ordering pages.
  • Registered users can log in to the account to view the order status.
  • You can email us to change the order details before shipment.
  • Orders cannot be canceled after shipping the packages.

At PNEDA, we strive to be the industry leader by quickly and reliably supplying high-quality electronic components to our clients.

Our approach is built around proving our clients with three key advantages:

  • Prompt Responsiveness

    Our team responds quickly to your requests, and gets to work immediately to find your parts.

  • Guaranteed Quality

    Our quality-control processes guard against counterfeits while ensuring reliability and performance.

  • Global Access

    Our worldwide network of trusted resources allows us to find and deliver the specific parts you need.

Hot search vocabulary

  • STP19NB20 Datasheet
  • where to find STP19NB20
  • STMicroelectronics

  • STMicroelectronics STP19NB20
  • STP19NB20 PDF Datasheet
  • STP19NB20 Stock

  • STP19NB20 Pinout
  • Datasheet STP19NB20
  • STP19NB20 Supplier

  • STMicroelectronics Distributor
  • STP19NB20 Price
  • STP19NB20 Distributor

STP19NB20 Specifications

ManufacturerSTMicroelectronics
SeriesPowerMESH™
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)200V
Current - Continuous Drain (Id) @ 25°C19A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs180mOhm @ 9.5A, 10V
Vgs(th) (Max) @ Id5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs40nC @ 10V
Vgs (Max)±30V
Input Capacitance (Ciss) (Max) @ Vds1000pF @ 25V
FET Feature-
Power Dissipation (Max)125W (Tc)
Operating Temperature150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-220AB
Package / CaseTO-220-3

The Products You May Be Interested In

MGSF1N02LT1G

ON Semiconductor

Manufacturer

ON Semiconductor

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

20V

Current - Continuous Drain (Id) @ 25°C

750mA (Ta)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

90mOhm @ 1.2A, 10V

Vgs(th) (Max) @ Id

2.4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

-

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

125pF @ 5V

FET Feature

-

Power Dissipation (Max)

400mW (Ta)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

SOT-23-3 (TO-236)

Package / Case

TO-236-3, SC-59, SOT-23-3

RJL5014DPK-00#T0

Renesas Electronics America

Manufacturer

Renesas Electronics America

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

500V

Current - Continuous Drain (Id) @ 25°C

19A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

400mOhm @ 9.5A, 10V

Vgs(th) (Max) @ Id

-

Gate Charge (Qg) (Max) @ Vgs

43nC @ 10V

Vgs (Max)

±30V

Input Capacitance (Ciss) (Max) @ Vds

1700pF @ 25V

FET Feature

-

Power Dissipation (Max)

150W (Tc)

Operating Temperature

150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-3P

Package / Case

TO-3P-3, SC-65-3

SI7370DP-T1-E3

Vishay Siliconix

Manufacturer

Vishay Siliconix

Series

TrenchFET®

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

60V

Current - Continuous Drain (Id) @ 25°C

9.6A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

6V, 10V

Rds On (Max) @ Id, Vgs

11mOhm @ 12A, 10V

Vgs(th) (Max) @ Id

4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

57nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

-

FET Feature

-

Power Dissipation (Max)

1.9W (Ta)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

PowerPAK® SO-8

Package / Case

PowerPAK® SO-8

FCP16N60N-F102

ON Semiconductor

Manufacturer

ON Semiconductor

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

600V

Current - Continuous Drain (Id) @ 25°C

16A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

199mOhm @ 8A, 10V

Vgs(th) (Max) @ Id

4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

52.3nC @ 10V

Vgs (Max)

±30V

Input Capacitance (Ciss) (Max) @ Vds

2170pF @ 100V

FET Feature

-

Power Dissipation (Max)

134.4W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-220F

Package / Case

TO-220-3 Full Pack

IRLL2703PBF

Infineon Technologies

Manufacturer

Infineon Technologies

Series

HEXFET®

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

30V

Current - Continuous Drain (Id) @ 25°C

3.9A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

4V, 10V

Rds On (Max) @ Id, Vgs

45mOhm @ 3.9A, 10V

Vgs(th) (Max) @ Id

2.4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

14nC @ 5V

Vgs (Max)

±16V

Input Capacitance (Ciss) (Max) @ Vds

530pF @ 25V

FET Feature

-

Power Dissipation (Max)

1W (Ta)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

SOT-223

Package / Case

TO-261-4, TO-261AA

Recently Sold

ISD2360SYI

ISD2360SYI

Nuvoton Technology

IC VOICE REC/PLAY 64SEC 16SOP

HCPL-060L-000E

HCPL-060L-000E

Broadcom

OPTOISO 3.75KV OPN COLLECTOR 8SO

PZTA06

PZTA06

ON Semiconductor

TRANS NPN 80V 0.5A SOT-223

MX29GL512FLT2I-10Q

MX29GL512FLT2I-10Q

Macronix

IC FLASH 512M PARALLEL 56TSOP

VS-72CPQ030PBF

VS-72CPQ030PBF

Vishay Semiconductor Diodes Division

DIODE ARRAY SCHOTTKY 30V TO247AC

MAX1680ESA

MAX1680ESA

Maxim Integrated

IC REG CHARGE PUMP INV 8SOIC

66F070

66F070

Sensata-Airpax

THERMOSTAT 70 DEG NO 8-DIP

AQY210SZ

AQY210SZ

Panasonic Electric Works

SSR RELAY SPST-NO 120MA 0-350V

DSC1001DI5-024.0000

DSC1001DI5-024.0000

Microchip Technology

MEMS OSC XO 24.0000MHZ CMOS SMD

FDV302P

FDV302P

ON Semiconductor

MOSFET P-CH 25V 120MA SOT-23

XC3S50A-4VQG100C

XC3S50A-4VQG100C

Xilinx

IC FPGA 68 I/O 100VQFP

LL4148

LL4148

ON Semiconductor

DIODE GEN PURP 100V 200MA SOD80