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STP18N55M5

STP18N55M5

For Reference Only

Part Number STP18N55M5
PNEDA Part # STP18N55M5
Description MOSFET N-CH 550V 13A TO220AB
Manufacturer STMicroelectronics
Unit Price Request a Quote
In Stock 3,366
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Mar 16 - Mar 21 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

STP18N55M5 Resources

Brand STMicroelectronics
ECAD Module ECAD
Mfr. Part NumberSTP18N55M5
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
STP18N55M5, STP18N55M5 Datasheet (Total Pages: 23, Size: 752.87 KB)
PDFSTP18N55M5 Datasheet Cover
STP18N55M5 Datasheet Page 2 STP18N55M5 Datasheet Page 3 STP18N55M5 Datasheet Page 4 STP18N55M5 Datasheet Page 5 STP18N55M5 Datasheet Page 6 STP18N55M5 Datasheet Page 7 STP18N55M5 Datasheet Page 8 STP18N55M5 Datasheet Page 9 STP18N55M5 Datasheet Page 10 STP18N55M5 Datasheet Page 11

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STP18N55M5 Specifications

ManufacturerSTMicroelectronics
SeriesMDmesh™ V
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)550V
Current - Continuous Drain (Id) @ 25°C16A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs192mOhm @ 8A, 10V
Vgs(th) (Max) @ Id5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs31nC @ 10V
Vgs (Max)±25V
Input Capacitance (Ciss) (Max) @ Vds1260pF @ 100V
FET Feature-
Power Dissipation (Max)110W (Tc)
Operating Temperature150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-220AB
Package / CaseTO-220-3

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