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STP13N65M2

STP13N65M2

For Reference Only

Part Number STP13N65M2
PNEDA Part # STP13N65M2
Description MOSFET N-CH 650V 10A TO220
Manufacturer STMicroelectronics
Unit Price Request a Quote
In Stock 16,908
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Mar 16 - Mar 21 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

STP13N65M2 Resources

Brand STMicroelectronics
ECAD Module ECAD
Mfr. Part NumberSTP13N65M2
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
STP13N65M2, STP13N65M2 Datasheet (Total Pages: 16, Size: 545.27 KB)
PDFSTP13N65M2 Datasheet Cover
STP13N65M2 Datasheet Page 2 STP13N65M2 Datasheet Page 3 STP13N65M2 Datasheet Page 4 STP13N65M2 Datasheet Page 5 STP13N65M2 Datasheet Page 6 STP13N65M2 Datasheet Page 7 STP13N65M2 Datasheet Page 8 STP13N65M2 Datasheet Page 9 STP13N65M2 Datasheet Page 10 STP13N65M2 Datasheet Page 11

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STP13N65M2 Specifications

ManufacturerSTMicroelectronics
SeriesMDmesh™ M2
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)650V
Current - Continuous Drain (Id) @ 25°C10A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs430mOhm @ 5A, 10V
Vgs(th) (Max) @ Id4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs17nC @ 10V
Vgs (Max)±25V
Input Capacitance (Ciss) (Max) @ Vds590pF @ 100V
FET Feature-
Power Dissipation (Max)110W (Tc)
Operating Temperature150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-220
Package / CaseTO-220-3

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