Certifications

iso9001
iso14001
icas
Delivery
security
warranty
roiginal
RoHS
UL
Millions of Electronic Parts In Stock. Price & Lead Time Quotes within 24 Hours.

STP13N65M2

STP13N65M2

For Reference Only

Part Number STP13N65M2
PNEDA Part # STP13N65M2
Description MOSFET N-CH 650V 10A TO220
Manufacturer STMicroelectronics
Unit Price Request a Quote
In Stock 16,908
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Feb 18 - Feb 23 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

STP13N65M2 Resources

Brand STMicroelectronics
ECAD Module ECAD
Mfr. Part NumberSTP13N65M2
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
STP13N65M2, STP13N65M2 Datasheet (Total Pages: 16, Size: 545.27 KB)
PDFSTP13N65M2 Datasheet Cover
STP13N65M2 Datasheet Page 2 STP13N65M2 Datasheet Page 3 STP13N65M2 Datasheet Page 4 STP13N65M2 Datasheet Page 5 STP13N65M2 Datasheet Page 6 STP13N65M2 Datasheet Page 7 STP13N65M2 Datasheet Page 8 STP13N65M2 Datasheet Page 9 STP13N65M2 Datasheet Page 10 STP13N65M2 Datasheet Page 11

Payment Method

TT Unionpay paypal paypalwtcreditcard alipay wu
  • Penda is not limited to cash transfers. Checks and bill transfers are also accepted.
  • If you need the detailed invoice or tax ID,please email us.
  • Some orders may require a minimum amount of $100.00.
  • Cheque or cash on delivery, processing may take an additional 3-5 days.

Logistics Mode

TNT UPS Fedex EMS DHL
  • Delivery time: At the same day (Order deadline is 2pm, HK Time).
  • Delivery date: usually 2 to 7 working days.
  • It is unable to appoint a date of delivery.
  • Tracking number will be sent once your order has been shipped.
  • It may take up to 24 hours before carriers display the info.

Notes

  • Please confirm the specifications of the products when ordering.
  • If you have special order instructions,please note it on the ordering pages.
  • Registered users can log in to the account to view the order status.
  • You can email us to change the order details before shipment.
  • Orders cannot be canceled after shipping the packages.

At PNEDA, we strive to be the industry leader by quickly and reliably supplying high-quality electronic components to our clients.

Our approach is built around proving our clients with three key advantages:

  • Prompt Responsiveness

    Our team responds quickly to your requests, and gets to work immediately to find your parts.

  • Guaranteed Quality

    Our quality-control processes guard against counterfeits while ensuring reliability and performance.

  • Global Access

    Our worldwide network of trusted resources allows us to find and deliver the specific parts you need.

Hot search vocabulary

  • STP13N65M2 Datasheet
  • where to find STP13N65M2
  • STMicroelectronics

  • STMicroelectronics STP13N65M2
  • STP13N65M2 PDF Datasheet
  • STP13N65M2 Stock

  • STP13N65M2 Pinout
  • Datasheet STP13N65M2
  • STP13N65M2 Supplier

  • STMicroelectronics Distributor
  • STP13N65M2 Price
  • STP13N65M2 Distributor

STP13N65M2 Specifications

ManufacturerSTMicroelectronics
SeriesMDmesh™ M2
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)650V
Current - Continuous Drain (Id) @ 25°C10A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs430mOhm @ 5A, 10V
Vgs(th) (Max) @ Id4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs17nC @ 10V
Vgs (Max)±25V
Input Capacitance (Ciss) (Max) @ Vds590pF @ 100V
FET Feature-
Power Dissipation (Max)110W (Tc)
Operating Temperature150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-220
Package / CaseTO-220-3

The Products You May Be Interested In

Manufacturer

NXP USA Inc.

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

30V

Current - Continuous Drain (Id) @ 25°C

1.7A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

80mOhm @ 1.7A, 10V

Vgs(th) (Max) @ Id

2.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

4.7nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

135pF @ 15V

FET Feature

-

Power Dissipation (Max)

275mW (Ta)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

SOT-323-3

Package / Case

SC-70, SOT-323

SI4860DY-T1-GE3

Vishay Siliconix

Manufacturer

Vishay Siliconix

Series

TrenchFET®

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

30V

Current - Continuous Drain (Id) @ 25°C

11A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

8mOhm @ 16A, 10V

Vgs(th) (Max) @ Id

1V @ 250µA (Min)

Gate Charge (Qg) (Max) @ Vgs

18nC @ 4.5V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

-

FET Feature

-

Power Dissipation (Max)

1.6W (Ta)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

8-SO

Package / Case

8-SOIC (0.154", 3.90mm Width)

STB18N60M6

STMicroelectronics

Manufacturer

STMicroelectronics

Series

MDmesh™ M6

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

600V

Current - Continuous Drain (Id) @ 25°C

13A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

280mOhm @ 6.5A, 10V

Vgs(th) (Max) @ Id

4.75V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

16.8nC @ 10V

Vgs (Max)

±25V

Input Capacitance (Ciss) (Max) @ Vds

650pF @ 100V

FET Feature

-

Power Dissipation (Max)

110W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

D2PAK

Package / Case

TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

Manufacturer

NXP USA Inc.

Series

TrenchMOS™

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

55V

Current - Continuous Drain (Id) @ 25°C

75A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

8mOhm @ 25A, 10V

Vgs(th) (Max) @ Id

4V @ 1mA

Gate Charge (Qg) (Max) @ Vgs

87nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

4352pF @ 25V

FET Feature

-

Power Dissipation (Max)

200W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-220AB

Package / Case

TO-220-3

IXFV52N30P

IXYS

Manufacturer

IXYS

Series

PolarHT™ HiPerFET™

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

300V

Current - Continuous Drain (Id) @ 25°C

52A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

66mOhm @ 500mA, 10V

Vgs(th) (Max) @ Id

5V @ 4mA

Gate Charge (Qg) (Max) @ Vgs

110nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

3490pF @ 25V

FET Feature

-

Power Dissipation (Max)

400W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

PLUS220

Package / Case

TO-220-3, Short Tab

Recently Sold

AD620ARZ

AD620ARZ

Analog Devices

IC INST AMP 1 CIRCUIT 8SOIC

LT1529IQ#PBF

LT1529IQ#PBF

Linear Technology/Analog Devices

IC REG LINEAR POS ADJ 3A 5DDPAK

PIC16LF1705-I/P

PIC16LF1705-I/P

Microchip Technology

IC MCU 8BIT 14KB FLASH 14DIP

6TPE330MIL

6TPE330MIL

Panasonic Electronic Components

CAP TANT POLY 330UF 6.3V 2917

GP1S094HCZ0F

GP1S094HCZ0F

SHARP/Socle Technology

SENSOR OPT SLOT PHOTOTRAN PCB MT

B160B-13-F

B160B-13-F

Diodes Incorporated

DIODE SCHOTTKY 60V 1A SMB

AWM720P1

AWM720P1

Honeywell Sensing and Productivity Solutions

SENSOR AIRFLOW AMP 200 SLPM

JAN2N2222A

JAN2N2222A

Microsemi

TRANS NPN 50V 0.8A

PME271Y447MR30

PME271Y447MR30

KEMET

CAP FILM 4700PF 20% 1KVDC RADIAL

MAX999EUK+T

MAX999EUK+T

Maxim Integrated

IC COMP BEYOND-THE-RAILS SOT23-5

DS5000T-32-16+

DS5000T-32-16+

Maxim Integrated

IC MCU 8BIT 32KB NVSRAM 40EDIP

PIC16F54-I/SO

PIC16F54-I/SO

Microchip Technology

IC MCU 8BIT 768B FLASH 18SOIC