STP11NM60FP
For Reference Only
Part Number | STP11NM60FP |
PNEDA Part # | STP11NM60FP |
Description | MOSFET N-CH 600V 11A TO220FP |
Manufacturer | STMicroelectronics |
Unit Price | Request a Quote |
In Stock | 6,804 |
Warehouses | Shipped from Hong Kong SAR |
Estimated Delivery | Nov 26 - Dec 1 (Choose Expedited Shipping) |
Guarantee | Up to 1 year [PNEDA-Warranty]* |
Free shipping on orders over $100. PNEDA is willing to provide you with better services.
|
|
|
STP11NM60FP Resources
Brand | STMicroelectronics |
ECAD Module | |
Mfr. Part Number | STP11NM60FP |
Category | Semiconductors › Transistors › Transistors - FETs, MOSFETs - Single |
Datasheet |
Payment Method
- Penda is not limited to cash transfers. Checks and bill transfers are also accepted.
- If you need the detailed invoice or tax ID,please email us.
- Some orders may require a minimum amount of $100.00.
- Cheque or cash on delivery, processing may take an additional 3-5 days.
Logistics Mode
- Delivery time: At the same day (Order deadline is 2pm, HK Time).
- Delivery date: usually 2 to 7 working days.
- It is unable to appoint a date of delivery.
- Tracking number will be sent once your order has been shipped.
- It may take up to 24 hours before carriers display the info.
Notes
- Please confirm the specifications of the products when ordering.
- If you have special order instructions,please note it on the ordering pages.
- Registered users can log in to the account to view the order status.
- You can email us to change the order details before shipment.
- Orders cannot be canceled after shipping the packages.
At PNEDA, we strive to be the industry leader by quickly and reliably supplying high-quality electronic components to our clients.
Our approach is built around proving our clients with three key advantages:
Prompt Responsiveness
Our team responds quickly to your requests, and gets to work immediately to find your parts.
Guaranteed Quality
Our quality-control processes guard against counterfeits while ensuring reliability and performance.
Global Access
Our worldwide network of trusted resources allows us to find and deliver the specific parts you need.
Hot search vocabulary
- STP11NM60FP Datasheet
- where to find STP11NM60FP
- STMicroelectronics
- STMicroelectronics STP11NM60FP
- STP11NM60FP PDF Datasheet
- STP11NM60FP Stock
- STP11NM60FP Pinout
- Datasheet STP11NM60FP
- STP11NM60FP Supplier
- STMicroelectronics Distributor
- STP11NM60FP Price
- STP11NM60FP Distributor
STP11NM60FP Specifications
Manufacturer | STMicroelectronics |
Series | MDmesh™ |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 600V |
Current - Continuous Drain (Id) @ 25°C | 11A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 10V |
Rds On (Max) @ Id, Vgs | 450mOhm @ 5.5A, 10V |
Vgs(th) (Max) @ Id | 5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 30nC @ 10V |
Vgs (Max) | ±30V |
Input Capacitance (Ciss) (Max) @ Vds | 1000pF @ 25V |
FET Feature | - |
Power Dissipation (Max) | 35W (Tc) |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Through Hole |
Supplier Device Package | TO-220FP |
Package / Case | TO-220-3 Full Pack |
The Products You May Be Interested In
Diodes Incorporated Manufacturer Diodes Incorporated Series - FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 240V Current - Continuous Drain (Id) @ 25°C 160mA (Ta) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 16Ohm @ 250mA, 10V Vgs(th) (Max) @ Id 3V @ 1mA Gate Charge (Qg) (Max) @ Vgs - Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 85pF @ 25V FET Feature - Power Dissipation (Max) - Operating Temperature - Mounting Type Through Hole Supplier Device Package E-Line (TO-92 compatible) Package / Case E-Line-3 |
STMicroelectronics Manufacturer STMicroelectronics Series STripFET™ III FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 24V Current - Continuous Drain (Id) @ 25°C 150A (Tc) Drive Voltage (Max Rds On, Min Rds On) 5V, 10V Rds On (Max) @ Id, Vgs 3.5mOhm @ 75A, 10V Vgs(th) (Max) @ Id 1.8V @ 250µA Gate Charge (Qg) (Max) @ Vgs 93nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 4450pF @ 15V FET Feature - Power Dissipation (Max) 125W (Tc) Operating Temperature -55°C ~ 175°C (TJ) Mounting Type Through Hole Supplier Device Package I-PAK Package / Case TO-251-3 Short Leads, IPak, TO-251AA |
Toshiba Semiconductor and Storage Manufacturer Toshiba Semiconductor and Storage Series - FET Type P-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 20V Current - Continuous Drain (Id) @ 25°C 2A (Ta) Drive Voltage (Max Rds On, Min Rds On) 1.8V, 4V Rds On (Max) @ Id, Vgs 130mOhm @ 1A, 4V Vgs(th) (Max) @ Id 1V @ 1mA Gate Charge (Qg) (Max) @ Vgs - Vgs (Max) ±8V Input Capacitance (Ciss) (Max) @ Vds 335pF @ 10V FET Feature - Power Dissipation (Max) 500mW (Ta) Operating Temperature 150°C (TJ) Mounting Type Surface Mount Supplier Device Package ES6 (1.6x1.6) Package / Case SOT-563, SOT-666 |
Infineon Technologies Manufacturer Infineon Technologies Series OptiMOS™ FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 600V Current - Continuous Drain (Id) @ 25°C 18A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 125mOhm @ 7.8A, 10V Vgs(th) (Max) @ Id 4.5V @ 390µA Gate Charge (Qg) (Max) @ Vgs 36nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 1503pF @ 400V FET Feature - Power Dissipation (Max) 92W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Through Hole Supplier Device Package PG-TO220-3 Package / Case TO-220-3 |
Infineon Technologies Manufacturer Infineon Technologies Series * FET Type - Technology - Drain to Source Voltage (Vdss) - Current - Continuous Drain (Id) @ 25°C - Drive Voltage (Max Rds On, Min Rds On) - Rds On (Max) @ Id, Vgs - Vgs(th) (Max) @ Id - Gate Charge (Qg) (Max) @ Vgs - Vgs (Max) - Input Capacitance (Ciss) (Max) @ Vds - FET Feature - Power Dissipation (Max) - Operating Temperature - Mounting Type - Supplier Device Package - Package / Case - |