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STP11N65M5

STP11N65M5

For Reference Only

Part Number STP11N65M5
PNEDA Part # STP11N65M5
Description MOSFET N CH 650V 9A TO-220
Manufacturer STMicroelectronics
Unit Price Request a Quote
In Stock 6,948
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Apr 17 - Apr 22 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

STP11N65M5 Resources

Brand STMicroelectronics
ECAD Module ECAD
Mfr. Part NumberSTP11N65M5
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
STP11N65M5, STP11N65M5 Datasheet (Total Pages: 30, Size: 1,017.69 KB)
PDFSTP11N65M5 Datasheet Cover
STP11N65M5 Datasheet Page 2 STP11N65M5 Datasheet Page 3 STP11N65M5 Datasheet Page 4 STP11N65M5 Datasheet Page 5 STP11N65M5 Datasheet Page 6 STP11N65M5 Datasheet Page 7 STP11N65M5 Datasheet Page 8 STP11N65M5 Datasheet Page 9 STP11N65M5 Datasheet Page 10 STP11N65M5 Datasheet Page 11

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STP11N65M5 Specifications

ManufacturerSTMicroelectronics
SeriesMDmesh™ V
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)650V
Current - Continuous Drain (Id) @ 25°C9A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs480mOhm @ 4.5A, 10V
Vgs(th) (Max) @ Id5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs17nC @ 10V
Vgs (Max)±25V
Input Capacitance (Ciss) (Max) @ Vds644pF @ 100V
FET Feature-
Power Dissipation (Max)85W (Tc)
Operating Temperature150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-220
Package / CaseTO-220-3

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