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STP110N8F7

STP110N8F7

For Reference Only

Part Number STP110N8F7
PNEDA Part # STP110N8F7
Description MOSFET N-CH 80V 80A TO-220
Manufacturer STMicroelectronics
Unit Price Request a Quote
In Stock 17,424
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Mar 16 - Mar 21 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

STP110N8F7 Resources

Brand STMicroelectronics
ECAD Module ECAD
Mfr. Part NumberSTP110N8F7
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
STP110N8F7, STP110N8F7 Datasheet (Total Pages: 13, Size: 681.26 KB)
PDFSTP110N8F7 Datasheet Cover
STP110N8F7 Datasheet Page 2 STP110N8F7 Datasheet Page 3 STP110N8F7 Datasheet Page 4 STP110N8F7 Datasheet Page 5 STP110N8F7 Datasheet Page 6 STP110N8F7 Datasheet Page 7 STP110N8F7 Datasheet Page 8 STP110N8F7 Datasheet Page 9 STP110N8F7 Datasheet Page 10 STP110N8F7 Datasheet Page 11

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STP110N8F7 Specifications

ManufacturerSTMicroelectronics
SeriesSTripFET™
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)80V
Current - Continuous Drain (Id) @ 25°C80A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs7.5mOhm @ 40A, 10V
Vgs(th) (Max) @ Id4.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs46.8nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds3435pF @ 40V
FET Feature-
Power Dissipation (Max)170W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-220
Package / CaseTO-220-3

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