STL12P6F6
For Reference Only
| Part Number | STL12P6F6 |
| PNEDA Part # | STL12P6F6 |
| Description | MOSFET P-CH 60V 4A 8POWERFLAT |
| Manufacturer | STMicroelectronics |
| Unit Price | Request a Quote |
| In Stock | 2,100 |
| Warehouses | Shipped from Hong Kong SAR |
| Estimated Delivery | Apr 5 - Apr 10 (Choose Expedited Shipping) |
| Guarantee | Up to 1 year [PNEDA-Warranty]* |
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Free shipping on orders over $100. PNEDA is willing to provide you with better services.
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STL12P6F6 Resources
| Brand | STMicroelectronics |
| ECAD Module |
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| Mfr. Part Number | STL12P6F6 |
| Category | Semiconductors › Transistors › Transistors - FETs, MOSFETs - Single |
| Datasheet |
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STL12P6F6 Specifications
| Manufacturer | STMicroelectronics |
| Series | DeepGATE™, STripFET™ VI |
| FET Type | P-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 60V |
| Current - Continuous Drain (Id) @ 25°C | 4A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Rds On (Max) @ Id, Vgs | 160mOhm @ 1.5A, 10V |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 6.4nC @ 10V |
| Vgs (Max) | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 340pF @ 48V |
| FET Feature | - |
| Power Dissipation (Max) | 75W (Tc) |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | PowerFlat™ (5x6) |
| Package / Case | 8-PowerVDFN |
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Manufacturer ON Semiconductor Series UniFET-II™ FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 600V Current - Continuous Drain (Id) @ 25°C 4.5A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 2Ohm @ 2.25A, 10V Vgs(th) (Max) @ Id 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs 13nC @ 10V Vgs (Max) ±25V Input Capacitance (Ciss) (Max) @ Vds 600pF @ 25V FET Feature - Power Dissipation (Max) 100W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Through Hole Supplier Device Package TO-220-3 Package / Case TO-220-3 |
Manufacturer Infineon Technologies Series HEXFET® FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 30V Current - Continuous Drain (Id) @ 25°C 35A (Tc) Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V Rds On (Max) @ Id, Vgs 31mOhm @ 21A, 10V Vgs(th) (Max) @ Id 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs 26nC @ 4.5V Vgs (Max) ±16V Input Capacitance (Ciss) (Max) @ Vds 870pF @ 25V FET Feature - Power Dissipation (Max) 68W (Tc) Operating Temperature -55°C ~ 175°C (TJ) Mounting Type Through Hole Supplier Device Package I-PAK Package / Case TO-251-3 Short Leads, IPak, TO-251AA |
