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STI40N65M2

STI40N65M2

For Reference Only

Part Number STI40N65M2
PNEDA Part # STI40N65M2
Description MOSFET N-CH 650V 32A I2PAK
Manufacturer STMicroelectronics
Unit Price Request a Quote
In Stock 20,544
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Mar 16 - Mar 21 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

STI40N65M2 Resources

Brand STMicroelectronics
ECAD Module ECAD
Mfr. Part NumberSTI40N65M2
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
STI40N65M2, STI40N65M2 Datasheet (Total Pages: 14, Size: 440.27 KB)
PDFSTP40N65M2 Datasheet Cover
STP40N65M2 Datasheet Page 2 STP40N65M2 Datasheet Page 3 STP40N65M2 Datasheet Page 4 STP40N65M2 Datasheet Page 5 STP40N65M2 Datasheet Page 6 STP40N65M2 Datasheet Page 7 STP40N65M2 Datasheet Page 8 STP40N65M2 Datasheet Page 9 STP40N65M2 Datasheet Page 10 STP40N65M2 Datasheet Page 11

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STI40N65M2 Specifications

ManufacturerSTMicroelectronics
SeriesMDmesh™ M2
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)650V
Current - Continuous Drain (Id) @ 25°C32A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs99mOhm @ 16A, 10V
Vgs(th) (Max) @ Id4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs56.5nC @ 10V
Vgs (Max)±25V
Input Capacitance (Ciss) (Max) @ Vds2355pF @ 100V
FET Feature-
Power Dissipation (Max)250W (Tc)
Operating Temperature150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageI2PAK
Package / CaseTO-262-3 Long Leads, I²Pak, TO-262AA

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