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STI33N60M2

STI33N60M2

For Reference Only

Part Number STI33N60M2
PNEDA Part # STI33N60M2
Description MOSFET N-CH 600V 26A I2PAK
Manufacturer STMicroelectronics
Unit Price Request a Quote
In Stock 23,244
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Mar 16 - Mar 21 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

STI33N60M2 Resources

Brand STMicroelectronics
ECAD Module ECAD
Mfr. Part NumberSTI33N60M2
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
STI33N60M2, STI33N60M2 Datasheet (Total Pages: 19, Size: 1,117.53 KB)
PDFSTF33N60M2 Datasheet Cover
STF33N60M2 Datasheet Page 2 STF33N60M2 Datasheet Page 3 STF33N60M2 Datasheet Page 4 STF33N60M2 Datasheet Page 5 STF33N60M2 Datasheet Page 6 STF33N60M2 Datasheet Page 7 STF33N60M2 Datasheet Page 8 STF33N60M2 Datasheet Page 9 STF33N60M2 Datasheet Page 10 STF33N60M2 Datasheet Page 11

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STI33N60M2 Specifications

ManufacturerSTMicroelectronics
SeriesMDmesh™ II Plus
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)600V
Current - Continuous Drain (Id) @ 25°C26A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs125mOhm @ 13A, 10V
Vgs(th) (Max) @ Id4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs45.5nC @ 10V
Vgs (Max)±25V
Input Capacitance (Ciss) (Max) @ Vds1781pF @ 100V
FET Feature-
Power Dissipation (Max)190W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageI2PAK (TO-262)
Package / CaseTO-262-3 Long Leads, I²Pak, TO-262AA

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