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STI23NM60N

STI23NM60N

For Reference Only

Part Number STI23NM60N
PNEDA Part # STI23NM60N
Description MOSFET N-CH 600V 19A I2PAK
Manufacturer STMicroelectronics
Unit Price Request a Quote
In Stock 8,712
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Nov 26 - Dec 1 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

STI23NM60N Resources

Brand STMicroelectronics
ECAD Module ECAD
Mfr. Part NumberSTI23NM60N
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
STI23NM60N, STI23NM60N Datasheet (Total Pages: 19, Size: 560.11 KB)
PDFSTB23NM60N Datasheet Cover
STB23NM60N Datasheet Page 2 STB23NM60N Datasheet Page 3 STB23NM60N Datasheet Page 4 STB23NM60N Datasheet Page 5 STB23NM60N Datasheet Page 6 STB23NM60N Datasheet Page 7 STB23NM60N Datasheet Page 8 STB23NM60N Datasheet Page 9 STB23NM60N Datasheet Page 10 STB23NM60N Datasheet Page 11

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STI23NM60N Specifications

ManufacturerSTMicroelectronics
SeriesMDmesh™ II
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)600V
Current - Continuous Drain (Id) @ 25°C19A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs180mOhm @ 9.5A, 10V
Vgs(th) (Max) @ Id4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs60nC @ 10V
Vgs (Max)±25V
Input Capacitance (Ciss) (Max) @ Vds2050pF @ 50V
FET Feature-
Power Dissipation (Max)150W (Tc)
Operating Temperature150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageI2PAK
Package / CaseTO-262-3 Long Leads, I²Pak, TO-262AA

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