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STI19NM65N

STI19NM65N

For Reference Only

Part Number STI19NM65N
PNEDA Part # STI19NM65N
Description MOSFET N-CH 650V 15.5A I2PAK
Manufacturer STMicroelectronics
Unit Price Request a Quote
In Stock 2,340
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Feb 19 - Feb 24 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

STI19NM65N Resources

Brand STMicroelectronics
ECAD Module ECAD
Mfr. Part NumberSTI19NM65N
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
STI19NM65N, STI19NM65N Datasheet (Total Pages: 19, Size: 542.55 KB)
PDFSTF19NM65N Datasheet Cover
STF19NM65N Datasheet Page 2 STF19NM65N Datasheet Page 3 STF19NM65N Datasheet Page 4 STF19NM65N Datasheet Page 5 STF19NM65N Datasheet Page 6 STF19NM65N Datasheet Page 7 STF19NM65N Datasheet Page 8 STF19NM65N Datasheet Page 9 STF19NM65N Datasheet Page 10 STF19NM65N Datasheet Page 11

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STI19NM65N Specifications

ManufacturerSTMicroelectronics
SeriesMDmesh™ II
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)650V
Current - Continuous Drain (Id) @ 25°C15.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs270mOhm @ 7.75A, 10V
Vgs(th) (Max) @ Id4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs55nC @ 10V
Vgs (Max)±25V
Input Capacitance (Ciss) (Max) @ Vds1900pF @ 50V
FET Feature-
Power Dissipation (Max)150W (Tc)
Operating Temperature150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageI2PAK
Package / CaseTO-262-3 Long Leads, I²Pak, TO-262AA

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