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STH410N4F7-2AG

STH410N4F7-2AG

For Reference Only

Part Number STH410N4F7-2AG
PNEDA Part # STH410N4F7-2AG
Description MOSFET N-CH 40V H2PAK-2
Manufacturer STMicroelectronics
Unit Price Request a Quote
In Stock 5,562
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Apr 3 - Apr 8 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

STH410N4F7-2AG Resources

Brand STMicroelectronics
ECAD Module ECAD
Mfr. Part NumberSTH410N4F7-2AG
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
STH410N4F7-2AG, STH410N4F7-2AG Datasheet (Total Pages: 19, Size: 842.77 KB)
PDFSTH410N4F7-6AG Datasheet Cover
STH410N4F7-6AG Datasheet Page 2 STH410N4F7-6AG Datasheet Page 3 STH410N4F7-6AG Datasheet Page 4 STH410N4F7-6AG Datasheet Page 5 STH410N4F7-6AG Datasheet Page 6 STH410N4F7-6AG Datasheet Page 7 STH410N4F7-6AG Datasheet Page 8 STH410N4F7-6AG Datasheet Page 9 STH410N4F7-6AG Datasheet Page 10 STH410N4F7-6AG Datasheet Page 11

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STH410N4F7-2AG Specifications

ManufacturerSTMicroelectronics
SeriesAutomotive, AEC-Q101, STripFET™ F7
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)40V
Current - Continuous Drain (Id) @ 25°C200A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs1.1mOhm @ 90A, 10V
Vgs(th) (Max) @ Id4.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs141nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds11500pF @ 25V
FET Feature-
Power Dissipation (Max)365W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageH2Pak-2
Package / CaseTO-263-3, D²Pak (2 Leads + Tab), TO-263AB

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