Certifications

iso9001
iso14001
icas
Delivery
security
warranty
roiginal
RoHS
UL
Millions of Electronic Parts In Stock. Price & Lead Time Quotes within 24 Hours.

STH210N75F6-2

STH210N75F6-2

For Reference Only

Part Number STH210N75F6-2
PNEDA Part # STH210N75F6-2
Description MOSFET N-CH 75V 180A H2PAK-2
Manufacturer STMicroelectronics
Unit Price Request a Quote
In Stock 2,268
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Apr 4 - Apr 9 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

STH210N75F6-2 Resources

Brand STMicroelectronics
ECAD Module ECAD
Mfr. Part NumberSTH210N75F6-2
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
STH210N75F6-2, STH210N75F6-2 Datasheet (Total Pages: 16, Size: 899.45 KB)
PDFSTH210N75F6-2 Datasheet Cover
STH210N75F6-2 Datasheet Page 2 STH210N75F6-2 Datasheet Page 3 STH210N75F6-2 Datasheet Page 4 STH210N75F6-2 Datasheet Page 5 STH210N75F6-2 Datasheet Page 6 STH210N75F6-2 Datasheet Page 7 STH210N75F6-2 Datasheet Page 8 STH210N75F6-2 Datasheet Page 9 STH210N75F6-2 Datasheet Page 10 STH210N75F6-2 Datasheet Page 11

Payment Method

TT Unionpay paypal paypalwtcreditcard alipay wu
  • Penda is not limited to cash transfers. Checks and bill transfers are also accepted.
  • If you need the detailed invoice or tax ID,please email us.
  • Some orders may require a minimum amount of $100.00.
  • Cheque or cash on delivery, processing may take an additional 3-5 days.

Logistics Mode

TNT UPS Fedex EMS DHL
  • Delivery time: At the same day (Order deadline is 2pm, HK Time).
  • Delivery date: usually 2 to 7 working days.
  • It is unable to appoint a date of delivery.
  • Tracking number will be sent once your order has been shipped.
  • It may take up to 24 hours before carriers display the info.

Notes

  • Please confirm the specifications of the products when ordering.
  • If you have special order instructions,please note it on the ordering pages.
  • Registered users can log in to the account to view the order status.
  • You can email us to change the order details before shipment.
  • Orders cannot be canceled after shipping the packages.

At PNEDA, we strive to be the industry leader by quickly and reliably supplying high-quality electronic components to our clients.

Our approach is built around proving our clients with three key advantages:

  • Prompt Responsiveness

    Our team responds quickly to your requests, and gets to work immediately to find your parts.

  • Guaranteed Quality

    Our quality-control processes guard against counterfeits while ensuring reliability and performance.

  • Global Access

    Our worldwide network of trusted resources allows us to find and deliver the specific parts you need.

Hot search vocabulary

  • STH210N75F6-2 Datasheet
  • where to find STH210N75F6-2
  • STMicroelectronics

  • STMicroelectronics STH210N75F6-2
  • STH210N75F6-2 PDF Datasheet
  • STH210N75F6-2 Stock

  • STH210N75F6-2 Pinout
  • Datasheet STH210N75F6-2
  • STH210N75F6-2 Supplier

  • STMicroelectronics Distributor
  • STH210N75F6-2 Price
  • STH210N75F6-2 Distributor

STH210N75F6-2 Specifications

ManufacturerSTMicroelectronics
SeriesDeepGATE™, STripFET™ VI
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)75V
Current - Continuous Drain (Id) @ 25°C180A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs2.8mOhm @ 90A, 10V
Vgs(th) (Max) @ Id4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs171nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds11800pF @ 25V
FET Feature-
Power Dissipation (Max)300W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageH2Pak-2
Package / CaseTO-263-3, D²Pak (2 Leads + Tab), TO-263AB

The Products You May Be Interested In

Manufacturer

IXYS

Series

HiPerFET™, PolarP2™

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

200V

Current - Continuous Drain (Id) @ 25°C

120A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

22mOhm @ 500mA, 10V

Vgs(th) (Max) @ Id

5V @ 4mA

Gate Charge (Qg) (Max) @ Vgs

152nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

6000pF @ 25V

FET Feature

-

Power Dissipation (Max)

714W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-247AD (IXFH)

Package / Case

TO-247-3

APT37F50S

Microsemi

Manufacturer

Microsemi Corporation

Series

POWER MOS 8™

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

500V

Current - Continuous Drain (Id) @ 25°C

37A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

150mOhm @ 18A, 10V

Vgs(th) (Max) @ Id

5V @ 1mA

Gate Charge (Qg) (Max) @ Vgs

145nC @ 10V

Vgs (Max)

±30V

Input Capacitance (Ciss) (Max) @ Vds

5710pF @ 25V

FET Feature

-

Power Dissipation (Max)

520W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

D3Pak

Package / Case

TO-268-3, D³Pak (2 Leads + Tab), TO-268AA

BUZ32 H

Infineon Technologies

Manufacturer

Infineon Technologies

Series

SIPMOS®

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

200V

Current - Continuous Drain (Id) @ 25°C

9.5A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

400mOhm @ 6A, 10V

Vgs(th) (Max) @ Id

4V @ 1mA

Gate Charge (Qg) (Max) @ Vgs

-

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

530pF @ 25V

FET Feature

-

Power Dissipation (Max)

75W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

PG-TO220-3

Package / Case

TO-220-3

RTQ020N05TR

Rohm Semiconductor

Manufacturer

Rohm Semiconductor

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

45V

Current - Continuous Drain (Id) @ 25°C

2A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

2.5V, 4.5V

Rds On (Max) @ Id, Vgs

190mOhm @ 2A, 4.5V

Vgs(th) (Max) @ Id

1.5V @ 1mA

Gate Charge (Qg) (Max) @ Vgs

2.3nC @ 4.5V

Vgs (Max)

±12V

Input Capacitance (Ciss) (Max) @ Vds

150pF @ 10V

FET Feature

-

Power Dissipation (Max)

600mW (Ta)

Operating Temperature

150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

TSMT6 (SC-95)

Package / Case

SOT-23-6 Thin, TSOT-23-6

AON6454A_001

Alpha & Omega Semiconductor

Manufacturer

Alpha & Omega Semiconductor Inc.

Series

*

FET Type

-

Technology

-

Drain to Source Voltage (Vdss)

-

Current - Continuous Drain (Id) @ 25°C

-

Drive Voltage (Max Rds On, Min Rds On)

-

Rds On (Max) @ Id, Vgs

-

Vgs(th) (Max) @ Id

-

Gate Charge (Qg) (Max) @ Vgs

-

Vgs (Max)

-

Input Capacitance (Ciss) (Max) @ Vds

-

FET Feature

-

Power Dissipation (Max)

-

Operating Temperature

-

Mounting Type

Surface Mount

Supplier Device Package

8-DFN (5x6)

Package / Case

8-PowerSMD, Flat Leads

Recently Sold

B560C-13-F

B560C-13-F

Diodes Incorporated

DIODE SCHOTTKY 60V 5A SMC

NAND256W3A2BZA6E

NAND256W3A2BZA6E

Micron Technology Inc.

IC FLASH 256M PARALLEL 55VFBGA

3224W-1-502E

3224W-1-502E

Bourns

TRIMMER 5K OHM 0.25W J LEAD TOP

MMBD7000-7-F

MMBD7000-7-F

Diodes Incorporated

DIODE ARRAY GP 75V 300MA SOT23-3

DS1670E

DS1670E

Maxim Integrated

IC RTC SYSTEM CTRLR SER 20-TSSOP

4TPE100MZB

4TPE100MZB

Panasonic Electronic Components

CAP TANT POLY 100UF 4V 1411

NCP3335ADMADJR2G

NCP3335ADMADJR2G

ON Semiconductor

IC REG LIN POS ADJ 500MA MICRO8

DSC1001DI5-024.0000

DSC1001DI5-024.0000

Microchip Technology

MEMS OSC XO 24.0000MHZ CMOS SMD

LS4148-GS08

LS4148-GS08

Vishay Semiconductor Diodes Division

DIODE GEN PURP 75V 150MA SOD80

PTN3363BSMP

PTN3363BSMP

NXP

IC DVI/HDMI LVL SHIFTER 32HVQFN

MUR1100ERLG

MUR1100ERLG

ON Semiconductor

DIODE GEN PURP 1KV 1A AXIAL

L78L05ABUTR

L78L05ABUTR

STMicroelectronics

IC REG LINEAR 5V 100MA SOT89-3