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STH110N10F7-2

STH110N10F7-2

For Reference Only

Part Number STH110N10F7-2
PNEDA Part # STH110N10F7-2
Description MOSFET N CH 100V 110A H2PAK
Manufacturer STMicroelectronics
Unit Price Request a Quote
In Stock 7,542
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Apr 3 - Apr 8 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

STH110N10F7-2 Resources

Brand STMicroelectronics
ECAD Module ECAD
Mfr. Part NumberSTH110N10F7-2
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
STH110N10F7-2, STH110N10F7-2 Datasheet (Total Pages: 19, Size: 858.08 KB)
PDFSTH110N10F7-6 Datasheet Cover
STH110N10F7-6 Datasheet Page 2 STH110N10F7-6 Datasheet Page 3 STH110N10F7-6 Datasheet Page 4 STH110N10F7-6 Datasheet Page 5 STH110N10F7-6 Datasheet Page 6 STH110N10F7-6 Datasheet Page 7 STH110N10F7-6 Datasheet Page 8 STH110N10F7-6 Datasheet Page 9 STH110N10F7-6 Datasheet Page 10 STH110N10F7-6 Datasheet Page 11

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STH110N10F7-2 Specifications

ManufacturerSTMicroelectronics
SeriesDeepGATE™, STripFET™ VII
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)100V
Current - Continuous Drain (Id) @ 25°C110A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs6.5mOhm @ 55A, 10V
Vgs(th) (Max) @ Id4.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs72nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds5117pF @ 50V
FET Feature-
Power Dissipation (Max)150W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageH2Pak-2
Package / CaseTO-263-3, D²Pak (2 Leads + Tab), TO-263AB

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