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STGWT80H65DFB

STGWT80H65DFB

For Reference Only

Part Number STGWT80H65DFB
PNEDA Part # STGWT80H65DFB
Description IGBT 650V 120A 469W TO3P-3L
Manufacturer STMicroelectronics
Unit Price Request a Quote
In Stock 4,878
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Apr 20 - Apr 25 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

STGWT80H65DFB Resources

Brand STMicroelectronics
ECAD Module ECAD
Mfr. Part NumberSTGWT80H65DFB
CategorySemiconductorsTransistorsTransistors - IGBTs - Single
Datasheet
STGWT80H65DFB, STGWT80H65DFB Datasheet (Total Pages: 18, Size: 972.51 KB)
PDFSTGWT80H65DFB Datasheet Cover
STGWT80H65DFB Datasheet Page 2 STGWT80H65DFB Datasheet Page 3 STGWT80H65DFB Datasheet Page 4 STGWT80H65DFB Datasheet Page 5 STGWT80H65DFB Datasheet Page 6 STGWT80H65DFB Datasheet Page 7 STGWT80H65DFB Datasheet Page 8 STGWT80H65DFB Datasheet Page 9 STGWT80H65DFB Datasheet Page 10 STGWT80H65DFB Datasheet Page 11

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STGWT80H65DFB Specifications

ManufacturerSTMicroelectronics
Series-
IGBT TypeTrench Field Stop
Voltage - Collector Emitter Breakdown (Max)650V
Current - Collector (Ic) (Max)120A
Current - Collector Pulsed (Icm)240A
Vce(on) (Max) @ Vge, Ic2V @ 15V, 80A
Power - Max469W
Switching Energy2.1mJ (on), 1.5mJ (off)
Input TypeStandard
Gate Charge414nC
Td (on/off) @ 25°C84ns/280ns
Test Condition400V, 80A, 10Ohm, 15V
Reverse Recovery Time (trr)85ns
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeThrough Hole
Package / CaseTO-3P-3, SC-65-3
Supplier Device PackageTO-3P

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