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STGWT30H60DFB

STGWT30H60DFB

For Reference Only

Part Number STGWT30H60DFB
PNEDA Part # STGWT30H60DFB
Description IGBT 600V 60A 260W TO3PL
Manufacturer STMicroelectronics
Unit Price Request a Quote
In Stock 6,804
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Dec 20 - Dec 25 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

STGWT30H60DFB Resources

Brand STMicroelectronics
ECAD Module ECAD
Mfr. Part NumberSTGWT30H60DFB
CategorySemiconductorsTransistorsTransistors - IGBTs - Single
Datasheet
STGWT30H60DFB, STGWT30H60DFB Datasheet (Total Pages: 20, Size: 1,431.97 KB)
PDFSTGWA30H60DFB Datasheet Cover
STGWA30H60DFB Datasheet Page 2 STGWA30H60DFB Datasheet Page 3 STGWA30H60DFB Datasheet Page 4 STGWA30H60DFB Datasheet Page 5 STGWA30H60DFB Datasheet Page 6 STGWA30H60DFB Datasheet Page 7 STGWA30H60DFB Datasheet Page 8 STGWA30H60DFB Datasheet Page 9 STGWA30H60DFB Datasheet Page 10 STGWA30H60DFB Datasheet Page 11

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STGWT30H60DFB Specifications

ManufacturerSTMicroelectronics
Series-
IGBT TypeTrench Field Stop
Voltage - Collector Emitter Breakdown (Max)600V
Current - Collector (Ic) (Max)60A
Current - Collector Pulsed (Icm)120A
Vce(on) (Max) @ Vge, Ic2V @ 15V, 30A
Power - Max260W
Switching Energy383µJ (on), 293µJ (off)
Input TypeStandard
Gate Charge149nC
Td (on/off) @ 25°C37ns/146ns
Test Condition400V, 30A, 10Ohm, 15V
Reverse Recovery Time (trr)53ns
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeThrough Hole
Package / CaseTO-3P-3, SC-65-3
Supplier Device PackageTO-3P

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Voltage - Collector Emitter Breakdown (Max)

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Current - Collector (Ic) (Max)

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Current - Collector Pulsed (Icm)

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Vce(on) (Max) @ Vge, Ic

2.5V @ 15V, 50A

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Input Type

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110nC

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Package / Case

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Supplier Device Package

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Manufacturer

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Series

GenX3™

IGBT Type

PT

Voltage - Collector Emitter Breakdown (Max)

600V

Current - Collector (Ic) (Max)

75A

Current - Collector Pulsed (Icm)

170A

Vce(on) (Max) @ Vge, Ic

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Power - Max

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Switching Energy

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Input Type

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Gate Charge

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Td (on/off) @ 25°C

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Test Condition

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Supplier Device Package

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Infineon Technologies

Manufacturer

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Series

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IGBT Type

Trench

Voltage - Collector Emitter Breakdown (Max)

330V

Current - Collector (Ic) (Max)

40A

Current - Collector Pulsed (Icm)

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Vce(on) (Max) @ Vge, Ic

2.14V @ 15V, 60A

Power - Max

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Switching Energy

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33nC

Td (on/off) @ 25°C

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Test Condition

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Reverse Recovery Time (trr)

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Operating Temperature

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TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

Supplier Device Package

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ON Semiconductor

Manufacturer

ON Semiconductor

Series

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IGBT Type

Trench Field Stop

Voltage - Collector Emitter Breakdown (Max)

1200V

Current - Collector (Ic) (Max)

70A

Current - Collector Pulsed (Icm)

105A

Vce(on) (Max) @ Vge, Ic

2.2V @ 15V, 35A

Power - Max

368W

Switching Energy

2.5mJ (on), 1.7mJ (off)

Input Type

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Gate Charge

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Td (on/off) @ 25°C

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Test Condition

600V, 35A, 10Ohm, 15V

Reverse Recovery Time (trr)

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Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

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Package / Case

TO-264-3, TO-264AA

Supplier Device Package

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