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STGW8M120DF3

STGW8M120DF3

For Reference Only

Part Number STGW8M120DF3
PNEDA Part # STGW8M120DF3
Description TRENCH GATE FIELD-STOP IGBT M SE
Manufacturer STMicroelectronics
Unit Price Request a Quote
In Stock 6,048
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Nov 26 - Dec 1 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

STGW8M120DF3 Resources

Brand STMicroelectronics
ECAD Module ECAD
Mfr. Part NumberSTGW8M120DF3
CategorySemiconductorsTransistorsTransistors - IGBTs - Single
Datasheet
STGW8M120DF3, STGW8M120DF3 Datasheet (Total Pages: 17, Size: 1,005.31 KB)
PDFSTGWA8M120DF3 Datasheet Cover
STGWA8M120DF3 Datasheet Page 2 STGWA8M120DF3 Datasheet Page 3 STGWA8M120DF3 Datasheet Page 4 STGWA8M120DF3 Datasheet Page 5 STGWA8M120DF3 Datasheet Page 6 STGWA8M120DF3 Datasheet Page 7 STGWA8M120DF3 Datasheet Page 8 STGWA8M120DF3 Datasheet Page 9 STGWA8M120DF3 Datasheet Page 10 STGWA8M120DF3 Datasheet Page 11

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STGW8M120DF3 Specifications

ManufacturerSTMicroelectronics
SeriesM
IGBT TypeTrench Field Stop
Voltage - Collector Emitter Breakdown (Max)1200V
Current - Collector (Ic) (Max)16A
Current - Collector Pulsed (Icm)32A
Vce(on) (Max) @ Vge, Ic2.3V @ 15V, 8A
Power - Max167W
Switching Energy390µJ (on), 370µJ (Off)
Input TypeStandard
Gate Charge32nC
Td (on/off) @ 25°C20ns/126ns
Test Condition600V, 8A, 33Ohm, 15V
Reverse Recovery Time (trr)103ns
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeThrough Hole
Package / CaseTO-247-3
Supplier Device PackageTO-247-3

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Voltage - Collector Emitter Breakdown (Max)

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Current - Collector Pulsed (Icm)

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Current - Collector (Ic) (Max)

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Current - Collector Pulsed (Icm)

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Vce(on) (Max) @ Vge, Ic

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Test Condition

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Rohm Semiconductor

Manufacturer

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Series

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IGBT Type

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Current - Collector (Ic) (Max)

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Current - Collector Pulsed (Icm)

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Vce(on) (Max) @ Vge, Ic

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Switching Energy

480µJ (on), 490µJ (off)

Input Type

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Gate Charge

84nC

Td (on/off) @ 25°C

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Test Condition

400V, 30A, 10Ohm, 15V

Reverse Recovery Time (trr)

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-40°C ~ 175°C (TJ)

Mounting Type

Through Hole

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Microsemi

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Series

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IGBT Type

NPT

Voltage - Collector Emitter Breakdown (Max)

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Current - Collector (Ic) (Max)

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Current - Collector Pulsed (Icm)

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Vce(on) (Max) @ Vge, Ic

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Power - Max

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Switching Energy

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Input Type

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Gate Charge

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Td (on/off) @ 25°C

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Test Condition

400V, 20A, 5Ohm, 15V

Reverse Recovery Time (trr)

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Operating Temperature

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Mounting Type

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Package / Case

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Supplier Device Package

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