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STGF10M65DF2

STGF10M65DF2

For Reference Only

Part Number STGF10M65DF2
PNEDA Part # STGF10M65DF2
Description IGBT TRENCH 650V 20A TO220FP
Manufacturer STMicroelectronics
Unit Price Request a Quote
In Stock 7,164
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Nov 17 - Nov 22 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

STGF10M65DF2 Resources

Brand STMicroelectronics
ECAD Module ECAD
Mfr. Part NumberSTGF10M65DF2
CategorySemiconductorsTransistorsTransistors - IGBTs - Single
Datasheet
STGF10M65DF2, STGF10M65DF2 Datasheet (Total Pages: 17, Size: 965.83 KB)
PDFSTGF10M65DF2 Datasheet Cover
STGF10M65DF2 Datasheet Page 2 STGF10M65DF2 Datasheet Page 3 STGF10M65DF2 Datasheet Page 4 STGF10M65DF2 Datasheet Page 5 STGF10M65DF2 Datasheet Page 6 STGF10M65DF2 Datasheet Page 7 STGF10M65DF2 Datasheet Page 8 STGF10M65DF2 Datasheet Page 9 STGF10M65DF2 Datasheet Page 10 STGF10M65DF2 Datasheet Page 11

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STGF10M65DF2 Specifications

ManufacturerSTMicroelectronics
SeriesM
IGBT TypeTrench Field Stop
Voltage - Collector Emitter Breakdown (Max)650V
Current - Collector (Ic) (Max)20A
Current - Collector Pulsed (Icm)40A
Vce(on) (Max) @ Vge, Ic2V @ 15V, 10A
Power - Max30W
Switching Energy120µJ (on), 270µJ (off)
Input TypeStandard
Gate Charge28nC
Td (on/off) @ 25°C19ns/91ns
Test Condition400V, 10A, 22Ohm, 15V
Reverse Recovery Time (trr)96ns
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeThrough Hole
Package / CaseTO-220-3 Full Pack
Supplier Device PackageTO-220FP

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Series

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IGBT Type

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Voltage - Collector Emitter Breakdown (Max)

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Current - Collector (Ic) (Max)

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Current - Collector Pulsed (Icm)

115A

Vce(on) (Max) @ Vge, Ic

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Power - Max

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Switching Energy

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Input Type

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Td (on/off) @ 25°C

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Test Condition

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Reverse Recovery Time (trr)

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Operating Temperature

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Mounting Type

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Package / Case

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Supplier Device Package

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Manufacturer

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Series

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IGBT Type

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Voltage - Collector Emitter Breakdown (Max)

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Current - Collector (Ic) (Max)

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Current - Collector Pulsed (Icm)

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Vce(on) (Max) @ Vge, Ic

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Power - Max

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Switching Energy

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Input Type

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Gate Charge

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Td (on/off) @ 25°C

11ns/180ns

Test Condition

1250V, 8A, 15Ohm, 15V

Reverse Recovery Time (trr)

5ns

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

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Package / Case

TO-247-3

Supplier Device Package

TO-247 (IXYH)

Manufacturer

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Series

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IGBT Type

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Voltage - Collector Emitter Breakdown (Max)

1200V

Current - Collector (Ic) (Max)

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Current - Collector Pulsed (Icm)

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Vce(on) (Max) @ Vge, Ic

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Power - Max

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Switching Energy

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Td (on/off) @ 25°C

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Test Condition

600V, 20A, 5Ohm, 15V

Reverse Recovery Time (trr)

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Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Package / Case

TO-220-3

Supplier Device Package

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RJH60V1BDPE-00#J3

Renesas Electronics America

Manufacturer

Renesas Electronics America

Series

-

IGBT Type

Trench

Voltage - Collector Emitter Breakdown (Max)

600V

Current - Collector (Ic) (Max)

16A

Current - Collector Pulsed (Icm)

-

Vce(on) (Max) @ Vge, Ic

2.2V @ 15V, 8A

Power - Max

52W

Switching Energy

17µJ (on), 110µJ (off)

Input Type

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Gate Charge

19nC

Td (on/off) @ 25°C

30ns/55ns

Test Condition

300V, 8A, 5Ohm, 15V

Reverse Recovery Time (trr)

25ns

Operating Temperature

150°C (TJ)

Mounting Type

Surface Mount

Package / Case

SC-83

Supplier Device Package

4-LDPAK

IXBH9N160G

IXYS

Manufacturer

IXYS

Series

BIMOSFET™

IGBT Type

-

Voltage - Collector Emitter Breakdown (Max)

1600V

Current - Collector (Ic) (Max)

9A

Current - Collector Pulsed (Icm)

10A

Vce(on) (Max) @ Vge, Ic

7V @ 15V, 5A

Power - Max

100W

Switching Energy

-

Input Type

Standard

Gate Charge

34nC

Td (on/off) @ 25°C

-

Test Condition

960V, 5A, 27Ohm, 10V

Reverse Recovery Time (trr)

-

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Package / Case

TO-247-3

Supplier Device Package

TO-247AD (IXBH)

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