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STFI13N65M2

STFI13N65M2

For Reference Only

Part Number STFI13N65M2
PNEDA Part # STFI13N65M2
Description MOSFET N-CH 650V 10A I2PAKFP
Manufacturer STMicroelectronics
Unit Price Request a Quote
In Stock 16,776
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Nov 29 - Dec 4 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

STFI13N65M2 Resources

Brand STMicroelectronics
ECAD Module ECAD
Mfr. Part NumberSTFI13N65M2
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
STFI13N65M2, STFI13N65M2 Datasheet (Total Pages: 15, Size: 565 KB)
PDFSTF13N65M2 Datasheet Cover
STF13N65M2 Datasheet Page 2 STF13N65M2 Datasheet Page 3 STF13N65M2 Datasheet Page 4 STF13N65M2 Datasheet Page 5 STF13N65M2 Datasheet Page 6 STF13N65M2 Datasheet Page 7 STF13N65M2 Datasheet Page 8 STF13N65M2 Datasheet Page 9 STF13N65M2 Datasheet Page 10 STF13N65M2 Datasheet Page 11

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STFI13N65M2 Specifications

ManufacturerSTMicroelectronics
SeriesMDmesh™ M2
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)650V
Current - Continuous Drain (Id) @ 25°C10A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs430mOhm @ 5A, 10V
Vgs(th) (Max) @ Id4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs17nC @ 10V
Vgs (Max)±25V
Input Capacitance (Ciss) (Max) @ Vds590pF @ 100V
FET Feature-
Power Dissipation (Max)25W (Tc)
Operating Temperature150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageI2PAKFP (TO-281)
Package / CaseTO-262-3 Full Pack, I²Pak

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