Certifications

iso9001
iso14001
icas
Delivery
security
warranty
roiginal
RoHS
UL
Millions of Electronic Parts In Stock. Price & Lead Time Quotes within 24 Hours.

STE139N65M5

STE139N65M5

For Reference Only

Part Number STE139N65M5
PNEDA Part # STE139N65M5
Description N-CHANNEL 650 V, 0.014 OHM TYP.,
Manufacturer STMicroelectronics
Unit Price Request a Quote
In Stock 4,662
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Nov 26 - Dec 1 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

STE139N65M5 Resources

Brand STMicroelectronics
ECAD Module ECAD
Mfr. Part NumberSTE139N65M5
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
STE139N65M5, STE139N65M5 Datasheet (Total Pages: 13, Size: 1,015.88 KB)
PDFSTE139N65M5 Datasheet Cover
STE139N65M5 Datasheet Page 2 STE139N65M5 Datasheet Page 3 STE139N65M5 Datasheet Page 4 STE139N65M5 Datasheet Page 5 STE139N65M5 Datasheet Page 6 STE139N65M5 Datasheet Page 7 STE139N65M5 Datasheet Page 8 STE139N65M5 Datasheet Page 9 STE139N65M5 Datasheet Page 10 STE139N65M5 Datasheet Page 11

Payment Method

TT Unionpay paypal paypalwtcreditcard alipay wu
  • Penda is not limited to cash transfers. Checks and bill transfers are also accepted.
  • If you need the detailed invoice or tax ID,please email us.
  • Some orders may require a minimum amount of $100.00.
  • Cheque or cash on delivery, processing may take an additional 3-5 days.

Logistics Mode

TNT UPS Fedex EMS DHL
  • Delivery time: At the same day (Order deadline is 2pm, HK Time).
  • Delivery date: usually 2 to 7 working days.
  • It is unable to appoint a date of delivery.
  • Tracking number will be sent once your order has been shipped.
  • It may take up to 24 hours before carriers display the info.

Notes

  • Please confirm the specifications of the products when ordering.
  • If you have special order instructions,please note it on the ordering pages.
  • Registered users can log in to the account to view the order status.
  • You can email us to change the order details before shipment.
  • Orders cannot be canceled after shipping the packages.

At PNEDA, we strive to be the industry leader by quickly and reliably supplying high-quality electronic components to our clients.

Our approach is built around proving our clients with three key advantages:

  • Prompt Responsiveness

    Our team responds quickly to your requests, and gets to work immediately to find your parts.

  • Guaranteed Quality

    Our quality-control processes guard against counterfeits while ensuring reliability and performance.

  • Global Access

    Our worldwide network of trusted resources allows us to find and deliver the specific parts you need.

Hot search vocabulary

  • STE139N65M5 Datasheet
  • where to find STE139N65M5
  • STMicroelectronics

  • STMicroelectronics STE139N65M5
  • STE139N65M5 PDF Datasheet
  • STE139N65M5 Stock

  • STE139N65M5 Pinout
  • Datasheet STE139N65M5
  • STE139N65M5 Supplier

  • STMicroelectronics Distributor
  • STE139N65M5 Price
  • STE139N65M5 Distributor

STE139N65M5 Specifications

ManufacturerSTMicroelectronics
SeriesMDmesh™
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)650V
Current - Continuous Drain (Id) @ 25°C130A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs17mOhm @ 65A, 10V
Vgs(th) (Max) @ Id5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs363nC @ 10V
Vgs (Max)±25V
Input Capacitance (Ciss) (Max) @ Vds15600pF @ 100V
FET Feature-
Power Dissipation (Max)672W (Tc)
Operating Temperature150°C (TJ)
Mounting TypeChassis Mount
Supplier Device PackageISOTOP
Package / CaseSOT-227-4, miniBLOC

The Products You May Be Interested In

NVMFS5834NLT3G

ON Semiconductor

Manufacturer

ON Semiconductor

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

40V

Current - Continuous Drain (Id) @ 25°C

14A (Ta), 75A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

9.3mOhm @ 20A, 10V

Vgs(th) (Max) @ Id

3V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

24nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

1231pF @ 20V

FET Feature

-

Power Dissipation (Max)

3.6W (Ta), 107W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

5-DFN (5x6) (8-SOFL)

Package / Case

8-PowerTDFN

STF13NM50N

STMicroelectronics

Manufacturer

STMicroelectronics

Series

MDmesh™ II

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

500V

Current - Continuous Drain (Id) @ 25°C

12A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

320mOhm @ 6A, 10V

Vgs(th) (Max) @ Id

4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

30nC @ 10V

Vgs (Max)

±25V

Input Capacitance (Ciss) (Max) @ Vds

960pF @ 50V

FET Feature

-

Power Dissipation (Max)

25W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-220FP

Package / Case

TO-220-3 Full Pack

SI4668DY-T1-E3

Vishay Siliconix

Manufacturer

Vishay Siliconix

Series

TrenchFET®

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

25V

Current - Continuous Drain (Id) @ 25°C

16.2A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

10.5mOhm @ 15A, 10V

Vgs(th) (Max) @ Id

2.6V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

42nC @ 10V

Vgs (Max)

±16V

Input Capacitance (Ciss) (Max) @ Vds

1654pF @ 15V

FET Feature

-

Power Dissipation (Max)

2.5W (Ta), 5W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

8-SO

Package / Case

8-SOIC (0.154", 3.90mm Width)

Manufacturer

NXP USA Inc.

Series

TrenchMOS™

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

30V

Current - Continuous Drain (Id) @ 25°C

100A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

3.3mOhm @ 25A, 10V

Vgs(th) (Max) @ Id

2.8V @ 1mA

Gate Charge (Qg) (Max) @ Vgs

114nC @ 10V

Vgs (Max)

±16V

Input Capacitance (Ciss) (Max) @ Vds

6960pF @ 25V

FET Feature

-

Power Dissipation (Max)

204W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-220AB

Package / Case

TO-220-3

IPU60R1K0CEAKMA2

Infineon Technologies

Manufacturer

Infineon Technologies

Series

CoolMOS™ CE

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

600V

Current - Continuous Drain (Id) @ 25°C

4.3A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

1Ohm @ 1.5A, 10V

Vgs(th) (Max) @ Id

3.5V @ 130µA

Gate Charge (Qg) (Max) @ Vgs

13nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

280pF @ 100V

FET Feature

-

Power Dissipation (Max)

61W (Tc)

Operating Temperature

-40°C ~ 150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

PG-TO251-3

Package / Case

TO-251-3 Short Leads, IPak, TO-251AA

Recently Sold

FDV303N

FDV303N

ON Semiconductor

MOSFET N-CH 25V 680MA SOT-23

LM7805CT

LM7805CT

ON Semiconductor

IC REG LINEAR 5V 1A TO220AB

MBR0530T1G

MBR0530T1G

ON Semiconductor

DIODE SCHOTTKY 30V 500MA SOD123

SI2300DS-T1-GE3

SI2300DS-T1-GE3

Vishay Siliconix

MOSFET N-CH 30V 3.6A SOT-23

TCLT1003

TCLT1003

Vishay Semiconductor Opto Division

OPTOISOLATR 5KV TRANSISTOR 4-SOP

WSL0805R0500FEA

WSL0805R0500FEA

Vishay Dale

RES 0.05 OHM 1% 1/8W 0805

USB3340-EZK-TR

USB3340-EZK-TR

Microchip Technology

IC TRANSCEIVER 1/1 32QFN

1N4148WS

1N4148WS

ON Semiconductor

DIODE GEN PURP 75V 150MA SOD323F

MT41K256M16HA-125 IT:E

MT41K256M16HA-125 IT:E

Micron Technology Inc.

IC DRAM 4G PARALLEL 96FBGA

XC7Z030-1FBG676I

XC7Z030-1FBG676I

Xilinx

IC SOC CORTEX-A9 667MHZ 676FCBGA

IS42S16160G-7BLI-TR

IS42S16160G-7BLI-TR

ISSI, Integrated Silicon Solution Inc

IC DRAM 256M PARALLEL 54TFBGA

LTM4625IY#PBF

LTM4625IY#PBF

Linear Technology/Analog Devices

DC DC CONVERTER 0.6-5.5V 5A