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STD8NM60N-1

STD8NM60N-1

For Reference Only

Part Number STD8NM60N-1
PNEDA Part # STD8NM60N-1
Description MOSFET N-CH 600V 7A IPAK
Manufacturer STMicroelectronics
Unit Price Request a Quote
In Stock 4,302
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Mar 16 - Mar 21 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

STD8NM60N-1 Resources

Brand STMicroelectronics
ECAD Module ECAD
Mfr. Part NumberSTD8NM60N-1
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
STD8NM60N-1, STD8NM60N-1 Datasheet (Total Pages: 19, Size: 708.09 KB)
PDFSTB8NM60N Datasheet Cover
STB8NM60N Datasheet Page 2 STB8NM60N Datasheet Page 3 STB8NM60N Datasheet Page 4 STB8NM60N Datasheet Page 5 STB8NM60N Datasheet Page 6 STB8NM60N Datasheet Page 7 STB8NM60N Datasheet Page 8 STB8NM60N Datasheet Page 9 STB8NM60N Datasheet Page 10 STB8NM60N Datasheet Page 11

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STD8NM60N-1 Specifications

ManufacturerSTMicroelectronics
SeriesMDmesh™ II
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)600V
Current - Continuous Drain (Id) @ 25°C7A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs650mOhm @ 3.5A, 10V
Vgs(th) (Max) @ Id4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs19nC @ 10V
Vgs (Max)±25V
Input Capacitance (Ciss) (Max) @ Vds560pF @ 50V
FET Feature-
Power Dissipation (Max)70W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageI-PAK
Package / CaseTO-251-3 Short Leads, IPak, TO-251AA

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