STD6NM60N-1
For Reference Only
| Part Number | STD6NM60N-1 |
| PNEDA Part # | STD6NM60N-1 |
| Description | MOSFET N-CH 600V 4.6A IPAK |
| Manufacturer | STMicroelectronics |
| Unit Price | Request a Quote |
| In Stock | 8,064 |
| Warehouses | Shipped from Hong Kong SAR |
| Estimated Delivery | Apr 3 - Apr 8 (Choose Expedited Shipping) |
| Guarantee | Up to 1 year [PNEDA-Warranty]* |
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Free shipping on orders over $100. PNEDA is willing to provide you with better services.
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STD6NM60N-1 Resources
| Brand | STMicroelectronics |
| ECAD Module |
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| Mfr. Part Number | STD6NM60N-1 |
| Category | Semiconductors › Transistors › Transistors - FETs, MOSFETs - Single |
| Datasheet |
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STD6NM60N-1 Specifications
| Manufacturer | STMicroelectronics |
| Series | MDmesh™ II |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 600V |
| Current - Continuous Drain (Id) @ 25°C | 4.6A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Rds On (Max) @ Id, Vgs | 920mOhm @ 2.3A, 10V |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 13nC @ 10V |
| Vgs (Max) | ±25V |
| Input Capacitance (Ciss) (Max) @ Vds | 420pF @ 50V |
| FET Feature | - |
| Power Dissipation (Max) | 45W (Tc) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Through Hole |
| Supplier Device Package | I-PAK |
| Package / Case | TO-251-3 Short Leads, IPak, TO-251AA |
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Manufacturer Sanken Series - FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 75V Current - Continuous Drain (Id) @ 25°C 9A (Ta) Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V Rds On (Max) @ Id, Vgs 9.1mOhm @ 27.2A, 10V Vgs(th) (Max) @ Id 2.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs 57nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 4040pF @ 25V FET Feature - Power Dissipation (Max) 3.1W (Ta), 77W (Tc) Operating Temperature 150°C (TJ) Mounting Type Surface Mount Supplier Device Package 8-DFN (5x6) Package / Case 8-PowerTDFN |
