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STD4NK80Z-1

STD4NK80Z-1

For Reference Only

Part Number STD4NK80Z-1
PNEDA Part # STD4NK80Z-1
Description MOSFET N-CH 800V 3A IPAK
Manufacturer STMicroelectronics
Unit Price Request a Quote
In Stock 36,804
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Apr 3 - Apr 8 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

STD4NK80Z-1 Resources

Brand STMicroelectronics
ECAD Module ECAD
Mfr. Part NumberSTD4NK80Z-1
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
STD4NK80Z-1, STD4NK80Z-1 Datasheet (Total Pages: 18, Size: 543.24 KB)
PDFSTP4NK80ZFP Datasheet Cover
STP4NK80ZFP Datasheet Page 2 STP4NK80ZFP Datasheet Page 3 STP4NK80ZFP Datasheet Page 4 STP4NK80ZFP Datasheet Page 5 STP4NK80ZFP Datasheet Page 6 STP4NK80ZFP Datasheet Page 7 STP4NK80ZFP Datasheet Page 8 STP4NK80ZFP Datasheet Page 9 STP4NK80ZFP Datasheet Page 10 STP4NK80ZFP Datasheet Page 11

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STD4NK80Z-1 Specifications

ManufacturerSTMicroelectronics
SeriesSuperMESH™
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)800V
Current - Continuous Drain (Id) @ 25°C3A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs3.5Ohm @ 1.5A, 10V
Vgs(th) (Max) @ Id4.5V @ 50µA
Gate Charge (Qg) (Max) @ Vgs22.5nC @ 10V
Vgs (Max)±30V
Input Capacitance (Ciss) (Max) @ Vds575pF @ 25V
FET Feature-
Power Dissipation (Max)80W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageI-PAK
Package / CaseTO-251-3 Short Leads, IPak, TO-251AA

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