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STD3NK50Z-1

STD3NK50Z-1

For Reference Only

Part Number STD3NK50Z-1
PNEDA Part # STD3NK50Z-1
Description MOSFET N-CH 500V 2.3A IPAK
Manufacturer STMicroelectronics
Unit Price Request a Quote
In Stock 46,950
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Mar 16 - Mar 21 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

STD3NK50Z-1 Resources

Brand STMicroelectronics
ECAD Module ECAD
Mfr. Part NumberSTD3NK50Z-1
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
STD3NK50Z-1, STD3NK50Z-1 Datasheet (Total Pages: 14, Size: 472.04 KB)
PDFSTQ3NK50ZR-AP Datasheet Cover
STQ3NK50ZR-AP Datasheet Page 2 STQ3NK50ZR-AP Datasheet Page 3 STQ3NK50ZR-AP Datasheet Page 4 STQ3NK50ZR-AP Datasheet Page 5 STQ3NK50ZR-AP Datasheet Page 6 STQ3NK50ZR-AP Datasheet Page 7 STQ3NK50ZR-AP Datasheet Page 8 STQ3NK50ZR-AP Datasheet Page 9 STQ3NK50ZR-AP Datasheet Page 10 STQ3NK50ZR-AP Datasheet Page 11

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STD3NK50Z-1 Specifications

ManufacturerSTMicroelectronics
SeriesSuperMESH™
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)500V
Current - Continuous Drain (Id) @ 25°C2.3A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs3.3Ohm @ 1.15A, 10V
Vgs(th) (Max) @ Id4.5V @ 50µA
Gate Charge (Qg) (Max) @ Vgs15nC @ 10V
Vgs (Max)±30V
Input Capacitance (Ciss) (Max) @ Vds280pF @ 25V
FET Feature-
Power Dissipation (Max)45W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageI-PAK
Package / CaseTO-251-3 Short Leads, IPak, TO-251AA

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