Certifications

iso9001
iso14001
icas
Delivery
security
warranty
roiginal
RoHS
UL
Millions of Electronic Parts In Stock. Price & Lead Time Quotes within 24 Hours.

STD37P3H6AG

STD37P3H6AG

For Reference Only

Part Number STD37P3H6AG
PNEDA Part # STD37P3H6AG
Description MOSFET P-CH 30V 40A DPAK
Manufacturer STMicroelectronics
Unit Price Request a Quote
In Stock 2,520
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Apr 3 - Apr 8 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

STD37P3H6AG Resources

Brand STMicroelectronics
ECAD Module ECAD
Mfr. Part NumberSTD37P3H6AG
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
STD37P3H6AG, STD37P3H6AG Datasheet (Total Pages: 16, Size: 316.02 KB)
PDFSTD37P3H6AG Datasheet Cover
STD37P3H6AG Datasheet Page 2 STD37P3H6AG Datasheet Page 3 STD37P3H6AG Datasheet Page 4 STD37P3H6AG Datasheet Page 5 STD37P3H6AG Datasheet Page 6 STD37P3H6AG Datasheet Page 7 STD37P3H6AG Datasheet Page 8 STD37P3H6AG Datasheet Page 9 STD37P3H6AG Datasheet Page 10 STD37P3H6AG Datasheet Page 11

Payment Method

TT Unionpay paypal paypalwtcreditcard alipay wu
  • Penda is not limited to cash transfers. Checks and bill transfers are also accepted.
  • If you need the detailed invoice or tax ID,please email us.
  • Some orders may require a minimum amount of $100.00.
  • Cheque or cash on delivery, processing may take an additional 3-5 days.

Logistics Mode

TNT UPS Fedex EMS DHL
  • Delivery time: At the same day (Order deadline is 2pm, HK Time).
  • Delivery date: usually 2 to 7 working days.
  • It is unable to appoint a date of delivery.
  • Tracking number will be sent once your order has been shipped.
  • It may take up to 24 hours before carriers display the info.

Notes

  • Please confirm the specifications of the products when ordering.
  • If you have special order instructions,please note it on the ordering pages.
  • Registered users can log in to the account to view the order status.
  • You can email us to change the order details before shipment.
  • Orders cannot be canceled after shipping the packages.

At PNEDA, we strive to be the industry leader by quickly and reliably supplying high-quality electronic components to our clients.

Our approach is built around proving our clients with three key advantages:

  • Prompt Responsiveness

    Our team responds quickly to your requests, and gets to work immediately to find your parts.

  • Guaranteed Quality

    Our quality-control processes guard against counterfeits while ensuring reliability and performance.

  • Global Access

    Our worldwide network of trusted resources allows us to find and deliver the specific parts you need.

Hot search vocabulary

  • STD37P3H6AG Datasheet
  • where to find STD37P3H6AG
  • STMicroelectronics

  • STMicroelectronics STD37P3H6AG
  • STD37P3H6AG PDF Datasheet
  • STD37P3H6AG Stock

  • STD37P3H6AG Pinout
  • Datasheet STD37P3H6AG
  • STD37P3H6AG Supplier

  • STMicroelectronics Distributor
  • STD37P3H6AG Price
  • STD37P3H6AG Distributor

STD37P3H6AG Specifications

ManufacturerSTMicroelectronics
SeriesAutomotive, AEC-Q101, STripFET™ H6
FET TypeP-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)30V
Current - Continuous Drain (Id) @ 25°C49A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs15mOhm @ 25A, 10V
Vgs(th) (Max) @ Id4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs30.6nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds1630pF @ 25V
FET Feature-
Power Dissipation (Max)60W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageDPAK
Package / CaseTO-252-3, DPak (2 Leads + Tab), SC-63

The Products You May Be Interested In

FDMS8025S

ON Semiconductor

Manufacturer

ON Semiconductor

Series

PowerTrench®, SyncFET™

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

30V

Current - Continuous Drain (Id) @ 25°C

24A (Ta), 49A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

2.8mOhm @ 24A, 10V

Vgs(th) (Max) @ Id

3V @ 1mA

Gate Charge (Qg) (Max) @ Vgs

47nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

3000pF @ 15V

FET Feature

-

Power Dissipation (Max)

2.5W (Ta), 50W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

8-PQFN (5x6)

Package / Case

8-PowerTDFN

DMN3009LFVW-7

Diodes Incorporated

Manufacturer

Diodes Incorporated

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

30V

Current - Continuous Drain (Id) @ 25°C

60A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

5mOhm @ 30A, 10V

Vgs(th) (Max) @ Id

2.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

42nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

2000pF @ 15V

FET Feature

-

Power Dissipation (Max)

1W (Ta)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount, Wettable Flank

Supplier Device Package

PowerDI3333-8 (Type UX)

Package / Case

8-PowerVDFN

FQPF6N25

ON Semiconductor

Manufacturer

ON Semiconductor

Series

QFET®

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

250V

Current - Continuous Drain (Id) @ 25°C

4A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

1Ohm @ 2A, 10V

Vgs(th) (Max) @ Id

5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

8.5nC @ 10V

Vgs (Max)

±30V

Input Capacitance (Ciss) (Max) @ Vds

300pF @ 25V

FET Feature

-

Power Dissipation (Max)

37W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-220F

Package / Case

TO-220-3 Full Pack

RE1C002UNTCL

Rohm Semiconductor

Manufacturer

Rohm Semiconductor

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

20V

Current - Continuous Drain (Id) @ 25°C

200mA (Ta)

Drive Voltage (Max Rds On, Min Rds On)

1.2V, 2.5V

Rds On (Max) @ Id, Vgs

1.2Ohm @ 100mA, 2.5V

Vgs(th) (Max) @ Id

1V @ 1mA

Gate Charge (Qg) (Max) @ Vgs

-

Vgs (Max)

±8V

Input Capacitance (Ciss) (Max) @ Vds

25pF @ 10V

FET Feature

-

Power Dissipation (Max)

150mW (Ta)

Operating Temperature

150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

EMT3F (SOT-416FL)

Package / Case

SC-89, SOT-490

IRFZ48ZL

Infineon Technologies

Manufacturer

Infineon Technologies

Series

HEXFET®

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

55V

Current - Continuous Drain (Id) @ 25°C

61A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

11mOhm @ 37A, 10V

Vgs(th) (Max) @ Id

4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

64nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

1720pF @ 25V

FET Feature

-

Power Dissipation (Max)

91W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-262

Package / Case

TO-262-3 Long Leads, I²Pak, TO-262AA

Recently Sold

PESD12VS1UB,115

PESD12VS1UB,115

Nexperia

TVS DIODE 12V 35V SOD523

CMDSH-3TR

CMDSH-3TR

SMC Diode Solutions

DIODE SCHOTTKY 30V 100MA SOD323

STPS1H100A

STPS1H100A

STMicroelectronics

DIODE SCHOTTKY 100V 1A SMA

EPM1270F256C5N

EPM1270F256C5N

Intel

IC CPLD 980MC 6.2NS 256FBGA

MTFC8GACAAAM-4M IT

MTFC8GACAAAM-4M IT

Micron Technology Inc.

IC FLASH EMMC 64G

W25Q80DVSNIG

W25Q80DVSNIG

Winbond Electronics

IC FLASH 8M SPI 104MHZ 8SOIC

SRP4020-2R2M

SRP4020-2R2M

Bourns

FIXED IND 2.2UH 3.9A 40 MOHM SMD

MAX1490BEPG+

MAX1490BEPG+

Maxim Integrated

IC TRANSCEIVER FULL 1/1 24DIP

SMBJ18CA-E3/52

SMBJ18CA-E3/52

Vishay Semiconductor Diodes Division

TVS DIODE 18V 29.2V DO214AA

NTJD5121NT1G

NTJD5121NT1G

ON Semiconductor

MOSFET 2N-CH 60V 0.295A SOT363

MAX1111CPE+

MAX1111CPE+

Maxim Integrated

IC ADC 8BIT SAR 16DIP

TSM2323CX RFG

TSM2323CX RFG

Taiwan Semiconductor Corporation

MOSFET P-CHANNEL 20V 4.7A SOT23